Document
IGBT MODULE
CIRCUIT
H-Bridge 150A 1200V
OUTLINE DRAWING
PBMB150B12
3 4 5 2 7 6 14 13 9 11 12
8- fasten- tab No 110
1
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Dimension(mm)
Approximate Weight : 650g
MAXMUM RATINGS (Tc=25°C) Item
Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms
Symbol
VCES VGES IC ICP PC Tj Tstg VISO FTOR
PBMB150B12
1200 +/ - 20 150 300 730 -40 to +150 -40 to +125 2500 3
Unit
V V A W °C °C V N•m
Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic
Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time
Symbol
ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff
Test Condition
VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=150A,VGE=15V VCE=5V,IC=150mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 4 ohm RG= 3.6 ohm VGE= +/- 15V
Min.
4.0 -
Typ.
1.9 12600 0.25 0.40 0.25 0.80
Max.
3.0 1.0 2.4 8.0 0.45 0.70 0.35 1.10
Unit mA µA V V pF µs
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value
Forward Current DC 1 ms IF IFM 150 300
Unit A Typ.
1.9 0.2
Characteristic
Peak Forward Voltage Reverse Recovery Time
Symbol
VF trr
Test Condition
IF=150A,VGE=0V IF=150A,VGE=-10V,di/dt=300A/µs
Min.
-
Max.
2.4 0.3
Unit V µs Unit °C/W
THERMAL CHARACTERISTICS Characteristic
Thermal Impedance IGBT DIODE
Symbol
Rth(j-c)
Test Condition
Junction to Case
Min.
-
Typ.
-
Max.
0.16 0.32
PBMB150B12
Fig.1- Output Characteristics (Typical)
300
Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
TC=25 ℃
16
TC=25 ℃ I C=75A 300A
VGE =20V
250
1 2V
1 0V
1 5V
Collector to Emitter Voltage V CE (V)
14 12 10 8 6 4 2 0
1 50A
Collector Current I C (A)
200
9V
150
100
8V
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7V
0 0 2 4 6 8 10
0
4
8
12
16
20
Collector to Emitter Voltage V CE (V)
Gate to Emitter Voltage V GE (V)
Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
16
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
800 700 600 500 400 16
TC= 1 25 ℃ I C=75A 300A
Collector to Emitter Voltage V CE (V)
Collector to Emitter Voltage V CE (V)
14
RL=4Ω TC=25℃
14
Gate to Emitter Voltage V GE (V)
1 50A
12 10 8 6 4 2 0
12 10 8
VCE =600V
300 6
400V
200 100 0 0 150 300 450 600 750 900 1050
200V
4 2 0 1200
0
4
8
12
16
20
Gate to Emitter Voltage V GE (V)
Total Gate Charge Qg (nC)
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
50000 20000 10000 1.4
Fig.6- Collector Current vs. Switching Time (Typical)
VCC=600V RG= 3.0 Ω VGE = ±1 5V TC=25 ℃
V GE =0V f= 1 MHZ Cies TC=25 ℃
1.2
Switching Time t (μ s)
Capacitance C (pF)
1 0.8 0.6 0.4 0.2
5000 2000 1000 500
tOFF
Coes
tf
Cres
200 100 50 0.1 0.2 0.5 1 2 5 10 20 50 100 200
tON tr
0 25 50 75 100 125 150
0
Collector to Emitter Voltage V CE (V)
Collector Current IC (A)
PBMB150B12
Fig.8- Forward Characteristics of Free Wheeling Diode
Fig.7- Series Gate Impedance vs. Switching Time (Typical)
10 5
300
(Typical)
TC=25℃ TC=125℃
VCC=600V IC=150A VGE=±15V TC=25℃
250
Switching Time t (μs)
2
Forward Current I F (A)
toff ton
1 0.5
tr
200
150
tf
100
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0.1 0.05
50
0.2
1
2
5
10
20
50
100
200
0
0
1
2
3
4
Series Gate Impedance RG (Ω)
Forward Voltage VF (V)
Fig.9- Reverse Recovery Characteristics (Typical)
500
Fig.10- Reverse Bias Safe Operating Area (Typical)
500 200 100
Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns)
IF=150A TC=25℃ trr
200 100 50
RG=3.0 Ω VGE = ±1 5V TC≦1 25 ℃
Collector Current I C (A)
300 450 600 750 900
50 20 10 5 2 1 0.5 0.2
20 10 5
IRrM
2
0
150
0.1
0
400
800
1200
1600
-di/dt (A/ μs)
Collector to Emitter Voltage V CE (V)
Fig.11- Transient Thermal Impedance
1
(℃/W)
5x10 -1 2x10 -1 1x10 -1 5x10 -2 2x10 -2 1x10 -2 5x10 -3
FRD IGBT
Transient Thermal Impedance Rth
(J-C)
TC=25℃
2x10 -3 1x10 -3 10 -5
1 Shot Pulse
10 -4 10 -3 10 -2 10 -1 1 10 1
Time t (s)
.