ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM
P4C1026 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM
FEATURES
Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) ...
Description
P4C1026 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM
FEATURES
Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 15/20/25/35 ns (Commercial/Industrial) – 20/25/35 ns (Military) Low Power
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TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved) – 28-Pin 300 mil SOJ – 28-Pin 400 mil SOJ – 28-Pin 400 mil Ceramic DIP – 32-Pin Ceramic LCC
5V±10% Power Supply
Data Retention with 2.0V Supply Three-State Outputs
DESCRIPTION
The P4C1026 is a 1 Meg ultra high speed static RAM organized as 256K x 4. The CMOS memory requires no clock or refreshing and has equal access and cycle times. Inputs and outputs are fully TTL-compatible. The RAM operates from a single 5V±10% tolerance power supply. With battery backup, data integrity is maintained for supply voltages down to 2.0V. Access times as fast as 15 nanoseconds are available, permitting greatly enhanced system speeds. CMOS is utilized to reduce power consumption. The P4C1026 is available in a 28-pin 300 mil and 400 mil SOJ packages, as well as Ceramic DIP and LCC packages, providing excellent board level densities.
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATION
SOJ (J5, J7), DIP (C7)
LCC(L13)
Document # SRAM127 REV E 1 Revised April 2007
P4C1026
MAXIMUM RATINGS(1)
Symbol VCC Parameter Power Supply Pin with Respect to GND Terminal Voltage with Respect to GND (up to 7.0V) Operating Temperature Value –0.5 to +7 –0.5 to VCC +0.5 –55 to +125 Unit V Symbol TBIAS TSTG PT ...
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