SPI42N03S2L-13 SPP42N03S2L-13 SPB42N03S2L-13
OptiMOS® Power-Transistor
Features • N-channel • Enhancement mode • Logic ...
SPI42N03S2L-13 SPP42N03S2L-13 SPB42N03S2L-13
OptiMOS® Power-
Transistor
Features N-channel Enhancement mode Logic level
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Product Summary V DS R DS(on),max ID 30 12.9 42 V mΩ A
Excellent gate charge x R DS(on) product (FOM)
Superior thermal resistance 175 °C operating temperature Avalanche rated dv /dt rated P-TO262-3-1 P-TO263-3-2 P-TO220-3-1
Type SPP42N03S2L-13 SPB42N03S2L-13 SPI42N03S2L-13
Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1
Ordering Code Q67042-S4034 Q67042-S4035 Q67042-S4104
Marking 2N03L13 2N03L13 2N03L13
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current Avalanche energy, single pulse Repetitive avalanche energy Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS E AR dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C I D=42 A, R GS=25 Ω limited by T jmax 2) I D=42 A, V DS=24 V, di /dt =200 A/µs, T j,max=175 °C Value 42 42 248 110 8 6 ±20 83 -55 ... 175 55/175/56 mJ mJ kV/µs V W °C Unit A
Rev. 2.0
page 1
2004-06-04
SPI42N03S2L-13 SPP42N03S2L-13
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB
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SPB42N03S2L-13
Unit max.
Values typ.
R thJC R thJA minimal footprint 6 cm2 cooling area3)
-
1.2 -
1.8 62 40
K/W
Electrical characterist...