HMC659

HMC659 v00.0807 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz 3 LINEAR & POWER AMPLIFIERS - CHIP Typical Applications The HMC659 is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military & Space Features P1dB Output Power: +26.5 dBm Gain: 19 dB Output IP3: +35 dBm Supply Voltage: +8V @ 300 mA 50 Ohm Matched Input/Output Die Size: 3.115 x 1.630 x 0.1 mm Test Instrumentation www.DataSheet4U.com Fiber Optics Functional Diagram General Description The HMC659 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 15 GHz. The amplifier provides 19 dB of gain, +35 dBm output IP3 and +26.5 dBm of output power at 1 dB gain compression while requiring 300 mA from a +8V supply. Gain flatness is excellent at ±0.5 dB from DC to 10 GHz making the HMC619 ideal for EW, ECM, Radar and test equipment applications. The HMC619 amplifier I/Os are internally matched to 50 ohms facilitating integration into Mutli-ChipModules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). Electrical Specifi cations, TA = +25° C, Vdd= +8V, Vgg2= +3V, Idd= 300 mA* Parameter Frequency Range Gain Gain Flatness Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd) (Vdd= 10V, Vgg1= -0.8V Typ.) 23 16.1 Min. Typ. DC - 6 19.1 ±0.5 0.013 19 18 2...