RSB12W

RSB12W Diodes Low Capacitance Protection Device RSB12W zApplication ESD Protection www.DataSheet4U.com 1.6±0.2 zDimensions (Unit : mm) zLand size figure (Unit : mm) 1.0 0.5 0.5 zFeatures 1) Ultra small mold type. (EMD3) 2) Low capacitance 3) Bi direction 0.2±0.1 　　-0.05 (2) 0.3±0.1 　　　 0.05 (3) 0.15±0.05 0.7 0.7 0.8±0.1 1.6±0.2 0～0.1 0.1Min 0.7 0.6 EMD3 0.6 (1) 0.55±0.1 0.7±0.1 zConstruction Silicon Epitaxial Planar 0.5 0.5 1.0±0.1 zStructure ROHM : JEDEC : SOT-416 JEITA : SC-75A dot(year week factory) zTaping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.1 　　　　　 0 1.75±0.1 0.3±0.1 3.5±0.05 1.8±0.2 5.5±0.2 1.8±0.1 φ0.5±0.1 0～0.1 8.0±0.2 zAbsolute maximum ratings (Ta=25°C) Parameter Power dissipation Junction temperature Storage temperature Symbol P Tj Tstg Limits 150 150 -55 to +150 Unit mW ℃ ℃ zElectrical characteristics (Ta=25°C) Parameter Zener voltage Reverse current Capacitance between terminals Symbol VZ IR Ct Min. 9.6 Typ. 1 Max. 14.4 0.10 Unit V µA pF Conditions IZ=5mA VR=9V f=1MHz,VR=0V 1.3 0.9±0.2 1/2 RSB12W Diodes zElectrical characteristics curve 10 REVERSE CURRENT:IR (nA) 10000 1000 1 Ta=25℃ Ta=75℃ Ta=125℃ 0.1 Ta=-25℃ Ta=150℃ 100 10 1 0.1 0.01 0.001 0.001 11 12 13 14 15 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS 16 0.0001 0 1 2 3 4 5 6 7 8 9 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0.1 0 1 2 3 4 5 6 7 8 9 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS Ta=75℃ Ta=25℃ Ta=-25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) ZENER CURRENT:Iz...