APM3011N Datasheet (data sheet) PDF





APM3011N Datasheet, N-Channel Enhancement Mode MOSFET

APM3011N   APM3011N  

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APM3011N N-Channel Enhancement Mode MOSF ET Features • • www.DataSheet4U.co m Pin Description 30V/60A , RDS(ON)=9 mΩ(typ.) @ VGS=10V RDS(ON)=14mΩ(typ .) @ VGS=5V Super High Dense Cell Desig n for Extremely Low RDS(ON) Reliable an d Rugged TO-220, TO-252 and TO-263 Pack ages • • Applications • Power M anagement in Desktop Computer or DC/DC Converters Systems. Top View of TO-220 , TO-252 and TO-263 Ordering and Mark ing Information APM3011N Handling Code Temp. Range Package Code Package Code F : TO-220 U :TO-252 Temp. Range C : 0 t o 70 ° C Handling Code TU : Tube TR : Tape & Reel G : TO-263 APM 3011N G/U/F : APM 3011N XXXXX XXXXX - Date Code

APM3011N Datasheet, N-Channel Enhancement Mode MOSFET

APM3011N   APM3011N  
Absolute Maximum Ratings Symbol VDSS VGS S ID* IDM Gate-Source Voltage Parameter Drain-Source Voltage (TA = 25°C unle ss otherwise noted) Rating 30 ±20 60 1 20 Unit V A Maximum Drain Current – Continuous Maximum Drain Current – Pu lsed * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right t o make changes to improve reliability o r manufacturability without notice, and advise customers to obtain the latest version of relevant information to veri fy before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.3 - Mar ., 2002 1 www.anpec.com.tw APM3011N Ab solute Maximum Ratings Cont. Symbol PD Parameter Maxim um Power Dissipation T A =25 ° C T A =100 ° C TJ www.DataShe et4U.com (TA = 25°C unless otherwise noted) Rating TO-252 TO-263 TO-252 TO-2 63 50 62.5 20 25 150 -55 to 150 50 2.5 Unit W W °C °C ° C/W ° C/W Maxim um Junction Tem perature Storage Tem pe rature Range Thermal Resistance – Jun ction to Ambient Thermal Resistance – Junction to Case T STG R θ JA R θ J C Electrical Characteristics Symbol St atic BVDSS IDSS VGS(th) IGSS RDS(ON)a V Sda Dynamicb Qg Qgs Qgd td(ON) Tr td(OF F) Tf Ciss Coss Crss Parameter Drain-So urce Breakdown V lt Gate Voltage Drain Zero Current Gate Threshold Voltage Gat e Leakage Current Drain-Source On-state Resistance Diode Forward Voltage T








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