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KA5M0765RC. 5M0765RC Datasheet

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KA5M0765RC. 5M0765RC Datasheet






5M0765RC KA5M0765RC. Datasheet pdf. Equivalent




5M0765RC KA5M0765RC. Datasheet pdf. Equivalent





Part

5M0765RC

Description

KA5M0765RC



Feature


Preliminary KA5M0765RC S P S The SPS pr oduct family is specially designed for an off-line SMPS with minimal external components. The SPS consist of high vol tage power SenseFET and current mode PW M IC. Included PWM controller features integrated fixed frequency oscillator, under voltage lock-out, leading edge bl anking, optimized gate turn-on/turn-off driver, thermal s.
Manufacture

Fairchild Semiconductor

Datasheet
Download 5M0765RC Datasheet


Fairchild Semiconductor 5M0765RC

5M0765RC; hutdown protection, over voltage protect ion, and temperature compensated precis ion current sources for loop compensati on and fault protection circuitry. Comp ared to discrete MOSFET and PWM control ler or RCC solution, a SPS can reduce t otal component count, design size, www. DataSheet4U.com weight and at the same time increase efficiency, productivity, and system reliab.


Fairchild Semiconductor 5M0765RC

ility. It has a basic platform well suit ed for cost-effective design in either a flyback converter or a forward conver ter. TO -22 0F -5L S P S 1. GND 2. Dr ain 3. Vcc 4. FB FEATURES • • • • • • • • • Precision fixed operating frequency (70kHz) Low start- up current (Typ. 100mA) Pulse by pulse current limiting Over current protectio n Over voltage protection (Min. 25V).


Fairchild Semiconductor 5M0765RC

Internal thermal shutdown function Unde r voltage lockout Internal high voltage sense FET Auto-restart mode ORDERING INFORMATION Device KA5M0765RC Package T O-220F-5L Topr (°C) −25°C to +85°C BLOCK DIAGRAM REV. B  1999 Fairc hild Semiconductor Corporation Prelimi nary KA5M0765RC ABSOLUTE MAXIMUM RATIN GS Characteristic Drain-source (GND) vo ltage (1) Drain-Gate volt.

Part

5M0765RC

Description

KA5M0765RC



Feature


Preliminary KA5M0765RC S P S The SPS pr oduct family is specially designed for an off-line SMPS with minimal external components. The SPS consist of high vol tage power SenseFET and current mode PW M IC. Included PWM controller features integrated fixed frequency oscillator, under voltage lock-out, leading edge bl anking, optimized gate turn-on/turn-off driver, thermal s.
Manufacture

Fairchild Semiconductor

Datasheet
Download 5M0765RC Datasheet




 5M0765RC
Preliminary
KA5M0765RC
SPS
SPS
The SPS product family is specially designed for an off-line SMPS
with minimal external components. The SPS consist of high voltage
power SenseFET and current mode PWM IC.
Included PWM controller features integrated fixed frequency
oscillator, under voltage lock-out, leading edge blanking, optimized
gate turn-on/turn-off driver, thermal shutdown protection, over
voltage protection, and temperature compensated precision current
sources for loop compensation and fault protection circuitry.
Compared to discrete MOSFET and PWM controller or RCC
www.DataSshoeluetti4oUn.,coam SPS can reduce total component count, design size,
weight and at the same time increase efficiency, productivity, and
system reliability.
It has a basic platform well suited for cost-effective design in either a
flyback converter or a forward converter.
TO-220F-5L
1. GND 2. Drain 3. Vcc 4. FB
FEATURES
• Precision fixed operating frequency (70kHz)
• Low start-up current (Typ. 100mA)
• Pulse by pulse current limiting
• Over current protection
• Over voltage protection (Min. 25V)
• Internal thermal shutdown function
• Under voltage lockout
• Internal high voltage sense FET
• Auto-restart mode
BLOCK DIAGRAM
ORDERING INFORMATION
Device
KA5M0765RC
Package
TO-220F-5L
Topr (°C)
25°C to +85°C
1999 Fairchild Semiconductor Corporation
REV. B




 5M0765RC
Preliminary
KA5M0765RC
ABSOLUTE MAXIMUM RATINGS
Characteristic
Drain-source (GND) voltage (1)
Drain-Gate voltage (RGS=1M)
Gate-source (GND) voltage
Drain current pulsed (2)
www.DataShSeientg4Ule.cpoumlsed avalanche energy (3)
Avalanche current (4)
Continuous drain current (TC=25°C)
Continuous drain current (TC=100°C)
Supply voltage
Analog input voltage range
Total power dissipation
Symbol
VDSS
VDGR
VGS
IDM
EAS
IAS
ID
ID
VCC
VFB
PD (wt H/S)
Derating
Operating temperature
Storage temperature
TOPR
TSTG
NOTES:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=24mH, starting Tj=25°C
4. L=13uH, starting Tj=25°C
Value
650
650
±30
28.0
570
20
7.0
5.6
30
0.3 to VSD
140
1.11
25 to +85
55 to +150
Unit
V
V
V
ADC
mJ
A
ADC
ADC
V
V
W
W/°C
°C
°C




 5M0765RC
Preliminary
KA5M0765RC
SPS
ELECTRICAL CHARACTERISTICS (SFET part)
(Ta=25°C unless otherwise specified)
Characteristic
Symbol
Test condition
Drain-source breakdown voltage
Zero gate voltage drain current
BVDSS
IDSS
www.DataShSeteatt4iUc.cdormain-source on resistance (note) RDS(ON)
Forward transconductance (note)
gfs
Input capacitance
Ciss
Output capacitance
Coss
VGS=0V, ID=50µA
VDS=Max., Rating, VGS=0V
VDS=0.8Max., Rating,
VGS=0V, TC=125°C
VGS=10V, ID=0.5A
VDS=50V, ID=0.5A
VGS=0V, VDS=25V,
f=1MHz
Reverse transfer capacitance
Crss
Turn on delay time
Rise time
Turn off delay time
Fall time
td(on)
tr
td(off)
tf
VDD=0.5BVDSS, ID=1.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
Total gate charge
(gate-source+gate-drain)
Gate-source charge
Gate-drain (Miller) charge
Qg VGS=10V, ID=1.0A,
VDS=0.5BVDSS (MOSFET
Qgs
switching time are
essentially independent of
Qgd operating temperature)
NOTE: Pulse test: Pulse width 300µS, duty cycle 2%
Min.
650
3.0
Typ.
1.25
1600
310
120
25
55
80
50
9.3
29.3
Max.
50
200
1.6
72
Unit
V
µA
µA
S
pF
nS
nC



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