DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N03ELE, NP80N03KLE NP80N03CLE, NP80N03DLE, NP80N03MLE, NP80N03NLE
SWITCHING ...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
NP80N03ELE, NP80N03KLE NP80N03CLE, NP80N03DLE, NP80N03MLE, NP80N03NLE
SWITCHING N-CHANNEL POWER MOS FET
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DESCRIPTION
These products are N-channel MOS Field Effect
Transistors designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP80N03ELE-E1-AY NP80N03ELE-E2-AY NP80N03KLE-E1-AY NP80N03KLE-E2-AY
Note1, 2 Note1, 2 Note1 Note1 Note1, 2 Note1, 2 Note1 Note1
LEAD PLATING
PACKING
PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g
Pure Sn (Tin)
Tape 800 p/reel TO-263 (MP-25ZK) typ. 1.5 g
NP80N03CLE-S12-AZ NP80N03DLE-S12-AY NP80N03MLE-S18-AY NP80N03NLE-S18-AY
Sn-Ag-Cu Tube 50 p/tube
TO-220 (MP-25) typ. 1.9 g TO-262 (MP-25 Fin Cut) typ. 1.8 g TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g
Pure Sn (Tin)
Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design
(TO-220)
FEATURES
Channel Temperature 175 degree rated Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 11 mΩ MAX. (VGS = 4.5 V, ID = 40 A) Low input capacitance Ciss = 2600 pF TYP. Built-in gate protection diode (TO-262)
(TO-263)
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