Document
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N055EHE, NP80N055KHE NP80N055CHE, NP80N055DHE, NP80N055MHE, NP80N055NHE
SWITCHING N-CHANNEL POWER MOS FET
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DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP80N055EHE-E1-AY NP80N055EHE-E2-AY NP80N055KHE-E1-AY NP80N055KHE-E2-AY
Note1, 2 Note1, 2 Note1 Note1 Note1, 2 Note1, 2 Note1 Note1
LEAD PLATING
PACKING
PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g
Pure Sn (Tin)
Tape 800 p/reel TO-263 (MP-25ZK) typ. 1.5 g
NP80N055CHE-S12-AZ NP80N055DHE-S12-AY NP80N055MHE-S18-AY NP80N055NHE-S18-AY
Sn-Ag-Cu Tube 50 p/tube
TO-220 (MP-25) typ. 1.9 g TO-262 (MP-25 Fin Cut) typ. 1.8 g TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g
Pure Sn (Tin)
Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design
(TO-220)
FEATURES
• Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF TYP. • Built-in gate protection diode (TO-262)
(TO-263)
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Document No. D14096EJ7V0DS00 (7th edition) Date Published October 2007 NS Printed in Japan
2002, 2007
The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
NP80N055EHE, NP80N055KHE, NP80N055CHE, NP80N055DHE, NP80N055MHE, NP80N055NHE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (Pulse)
Note2 Note1
VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
55 ±20 ±80 ±200 1.8 120 175 −55 to +175 45/31/10 2.0/96/100
V V A A W W °C °C A mJ
Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature
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Storage Temperature Single Avalanche Current
Note3 Note3
IAS EAS
Single Avalanche Energy
Notes 1. Calculated constant current according to MAX. allowable channel temperature. 2. PW ≤ 10 μs, Duty cycle ≤ 1% 3. Starting Tch = 25°C, VDD = 28 V, RG = 25 Ω, VGS = 20 → 0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.25 83.3 °C/W °C/W
2
Data Sheet D14096EJ7V0DS
NP80N055EHE, NP80N055KHE, NP80N055CHE, NP80N055DHE, NP80N055MHE, NP80N055NHE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance SYMBOL IDSS IGSS VGS(th).