NP80N055MHE

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055EHE, NP80N055KHE NP80N055CHE, NP80N055DHE, NP80N055MHE, NP80N055NHE SWITCHING N-CHANNEL POWER MOS FET www.DataSheet4U.com DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP80N055EHE-E1-AY NP80N055EHE-E2-AY NP80N055KHE-E1-AY NP80N055KHE-E2-AY Note1, 2 Note1, 2 Note1 Note1 Note1, 2 Note1, 2 Note1 Note1 LEAD PLATING PACKING PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g Pure Sn (Tin) Tape 800 p/reel TO-263 (MP-25ZK) typ. 1.5 g NP80N055CHE-S12-AZ NP80N055DHE-S12-AY NP80N055MHE-S18-AY NP80N055NHE-S18-AY Sn-Ag-Cu Tube 50 p/tube TO-220 (MP-25) typ. 1.9 g TO-262 (MP-25 Fin Cut) typ. 1.8 g TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g Pure Sn (Tin) Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design (TO-220) FEATURES Channel temperature 175 degree rated Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) Low input capacitance Ciss = 2400 pF TYP. Built-in gate protection diode (TO-262) (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14096EJ7V0DS00 (7th edi...