DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N055CLE, NP80N055DLE, NP80N055ELE
SWITCHING N-CHANNEL POWER MOS FET INDUSTR...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
NP80N055CLE, NP80N055DLE, NP80N055ELE
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
These products are N-channel MOS Field Effect
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Transistor designed for high current switching
ORDERING INFORMATION
PART NUMBER NP80N055CLE NP80N055DLE PACKAGE TO-220AB TO-262 TO-263
applications.
FEATURES
Channel temperature 175 degree rated Super low on-state resistance RDS(on)1 = 11 m Ω MAX. (VGS = 10 V, I D = 40 A) RDS(on)2 = 13 m Ω MAX. (VGS = 5 V, I D = 40 A) Low Ciss : Ciss = 2900 pF TYP. Built-in gate protection diode
NP80N055ELE
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (T A = 25°C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC)
Note1 Note2
VDSS VGSS ID(DC) ID(pulse) PT PT IAS EAS Tch Tstg
55 ±20 ±80 ±200 1.8 120 45 / 30 / 10 2.0 / 90 / 100 175 –55 to +175
V V A A W W A mJ °C °C (TO-263) (TO-262)
Drain Current (Pulse)
Total Power Dissipation (TA = 25 °C) Total Power Dissipation (TC = 25 °C) Single Avalanche Current Channel Temperature Storage Temperature
Note3
Single Avalanche Energy Note3
Notes 1. Calculated constant current according to MAX. allowable channel temperature. 2. PW ≤ 10 µs, Duty cycle ≤ 1 % 3. Starting Tch = 25 °C, RG = 25 Ω , VGS = 20 V →0 V (see Figure 4.)
THERMAL RESISTANCE
Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 1.25 83.3 °C/W °C/W
The information in this document is subject to change without notice. Before using this document, please confirm...