NP80N055ELE

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055CLE, NP80N055DLE, NP80N055ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION These products are N-channel MOS Field Effect www.DataSheet4U.com Transistor designed for high current switching ORDERING INFORMATION PART NUMBER NP80N055CLE NP80N055DLE PACKAGE TO-220AB TO-262 TO-263 applications. FEATURES Channel temperature 175 degree rated Super low on-state resistance RDS(on)1 = 11 m Ω MAX. (VGS = 10 V, I D = 40 A) RDS(on)2 = 13 m Ω MAX. (VGS = 5 V, I D = 40 A) Low Ciss : Ciss = 2900 pF TYP. Built-in gate protection diode NP80N055ELE (TO-220AB) ABSOLUTE MAXIMUM RATINGS (T A = 25°C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Note1 Note2 VDSS VGSS ID(DC) ID(pulse) PT PT IAS EAS Tch Tstg 55 ±20 ±80 ±200 1.8 120 45 / 30 / 10 2.0 / 90 / 100 175 –55 to +175 V V A A W W A mJ °C °C (TO-263) (TO-262) Drain Current (Pulse) Total Power Dissipation (TA = 25 °C) Total Power Dissipation (TC = 25 °C) Single Avalanche Current Channel Temperature Storage Temperature Note3 Single Avalanche Energy Note3 Notes 1. Calculated constant current according to MAX. allowable channel temperature. 2. PW ≤ 10 µs, Duty cycle ≤ 1 % 3. Starting Tch = 25 °C, RG = 25 Ω , VGS = 20 V →0 V (see Figure 4.) THERMAL RESISTANCE Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 1.25 83.3 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm...