PJP6000

PJP6000 60V N-Channel Enhancement Mode MOSFET FEATURES RDS(ON), VGS@10V,IDS@30A=14mΩ Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for Converters and Power Motor Controls Fully Characterized Avalanche Voltage and Current www.DataSheet4U.com In compliance with EU RoHS 2002/95/EC directives MECHANICALDATA Case: TO-220AB Molded Plastic Terminals : Solderable per MIL-STD-750,Method 2026 Marking : P6000 Drain Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R D r a i n- S o ur c e Vo l t a g e G a t e - S o ur c e Vo l t a g e C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) S ym b o l VD S VGS ID ID M TA = 2 5 O C TA = 7 5 O C Li mi t 60 +20 60 210 90 5 3 .5 -5 5 to +1 5 0 U ni t s V V A A W O M a xi m um P o w e r D i s s i p a t i o n PD TJ ,TS T G EAS RθJ C RθJ A O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e C Avalanche Energy with Single Pulse IA S =37A, VDD=30V, L=0.3mH Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance(PCB mounted)2 410 1 .4 62 O mJ C /W C /W O Note: 1. Maximum DC current limited by the package PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-JUN.11.2007 PAGE . 1 PJP6000 ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted ) P a ra me te r S ta ti c D r a i n- S...