APT20N60BCF Datasheet (data sheet) PDF





APT20N60BCF Datasheet, Super Junction FREDFET

APT20N60BCF   APT20N60BCF  

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600V 20A 0.220Ω APT20N60BCF APT20N60SC F APT20N60BCFG* APT20N60SCFG* *G Denote s RoHS Compliant, Pb Free Terminal Fini sh. C O OLMOS Power Semiconductors Su per Junction FREDFET TO -2 47 D3PAK Ultra Low RDS(ON) • Low Miller Cap acitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated www.DataShee t4U.com • Extreme dv/dt Rated • In trinsic Fast-Recovery Body Diode • Ex treme Low Reverse Recovery Charge • I deal For ZVS Applications • Popular T O-247 or Surface Mount D3 Package G S D MAXIMUM RATINGS Symbol VDSS ID IDM VG S PD TJ,TSTG TL dv/ dt IAR EAR EAS Para meter Drain-Source Voltage Continuous D rain Current @ TC = 25°C Continuous Drain Cur

APT20N60BCF Datasheet, Super Junction FREDFET

APT20N60BCF   APT20N60BCF  
rent @ TC = 100°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless other wise specified. APT20N60BCF(G)_SCF(G) UNIT Volts 600 20 13 60 ±30 208 1.67 -55 to 150 260 80 20 7 4 Amps Gate-S ource Voltage Continuous Total Power Di ssipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction T emperature Range Lead Temperature: 0.06 3" from Case for 10 Sec. Drain-Source V oltage slope (VDS = 480V, ID = 20A, TJ = 125°C) Avalanche Current 7 Volts Wa tts W/°C °C V/ns Amps mJ Repetitive Avalanche Energy 1 690 Single Pulse A valanche Energy STATIC ELECTRICAL CHAR ACTERISTICS Symbol BVDSS RDS(on) IDSS I GSS VGS(th) Characteristic / Test Condi tions Drain-Source Breakdown Voltage (V GS = 0V, ID = 250µA) Drain-Source On-S tate Resistance 2 MIN 600 TYP MAX U NIT Volts (VGS = 10V, ID = 13A) 0.220 2.1 1700 ±100 3 4 5 Ohms µA nA Volt s 5-2005 050-7235 Rev A Zero Gate Volt age Drain Current (VDS = 600V, VGS = 0V ) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C) Gate-Sou rce Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) APT Website - http://www.adv ancedpower.com CAUTION: These Devices are Sensitive to Electrostatic Discharg e. Proper Handling Procedures Should Be Followed. "COOLMOS™ comprise a new family of transistors develo








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