IS62C1024AL

IS62C1024AL IS65C1024AL 128K x 8 LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 35, 45 ns Low active power: 100 mW (typical) Low standby power: 20 µW (typical) CMOS standby www.DataSheet4U.com Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications Fully static operation: no clock or refresh required TTL compatible inputs and outputs Single 5V (±10%) power supply Commercial, Industrial, and Automotive temperature ranges available Standard Pin Configuration: — 32-pin SOP/ 32-pin TSOP (Type 1) Lead free available ISSI JANUARY 2005 ® DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072word by 8-bit CMOS static RAM. It is fabricated using highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels. Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable (WE) controls both writing and reading of the memory. FUNCTIONAL BLOCK DIAGRAM A0-A16 DECODER 128K x 8 MEMORY ARRAY VDD GND I/O DATA CIRCUIT I/O0-I/O7 COLUMN I/O CE1 CE2 OE WE CONTROL CIRCUIT Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its...