Document
IS62C1024AL IS65C1024AL
128K x 8 LOW POWER CMOS STATIC RAM
FEATURES
• High-speed access time: 35, 45 ns • Low active power: 100 mW (typical) • Low standby power: 20 µW (typical) CMOS standby www.DataSheet4U.com • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V (±10%) power supply • Commercial, Industrial, and Automotive temperature ranges available • Standard Pin Configuration: — 32-pin SOP/ 32-pin TSOP (Type 1) • Lead free available
ISSI
JANUARY 2005
®
DESCRIPTION
The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072word by 8-bit CMOS static RAM. It is fabricated using highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels. Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable (WE) controls both writing and reading of the memory.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128K x 8 MEMORY ARRAY
VDD GND I/O DATA CIRCUIT
I/O0-I/O7
COLUMN I/O
CE1 CE2 OE WE CONTROL CIRCUIT
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C 01/24/05
1
IS62C1024AL IS65C1024AL
PIN CONFIGURATION
32-Pin SOP
ISSI
PIN CONFIGURATION
32-Pin TSOP (Type 1)
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VDD A15 CE2 WE A13 A8 A9 A11 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3
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NC A16 A14 A12 A7 A6 A5
1 2 3 4 5 6 7
A4 8 www.DataSheet4U.com A3 9 A2 A1 A0 I/O0 I/O1 I/O2 GND 10 11 12 13 14 15 16
A11 A9 A8 A13 WE CE2 A15 VDD NC A16 A14 A12 A7 A6 A5 A4
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3
PIN DESCRIPTIONS
A0-A16 CE1 CE2 OE WE I/O0-I/O7 VDD GND Address Inputs Chip Enable 1 Input Chip Enable 2 Input Output Enable Input Write Enable Input Input/Output Power Ground
OPERATING RANGE (IS62C1024AL)
Range Commercial Industrial Ambient Temperature 0°C to +70°C -40°C to +85°C VDD 5V ± 10% 5V ± 10%
OPERATING RANGE (IS65C1024AL)
Range Automotive Ambient Temperature -40°C to +125°C VDD 5V ± 10%
TRUTH TABLE
Mode Not Selected (Power-down) Output Disabled Read Write WE X X H H L CE1 H X L L L CE2 X L H H H OE X X H L X I/O Operation High-Z High-Z High-Z DOUT DIN VDD Current ISB1, ISB2 ISB1, ISB2 ICC ICC ICC
2
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C 01/24/05
IS62C1024AL IS65C1024AL
ABSOLUTE MAXIMUM RATINGS(1)
Symbol VTERM TSTG PT IOUT Parameter Terminal Voltage with Respect to GND Storage Temperature Power Dissipation DC Output Current (LOW) Value –0.5 to +7.0 –65 to +125 1.0 20 Unit V °C W mA
ISSI
®
Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. www.DataSheet4U.com
CAPACITANCE(1,2)
Symbol CIN COUT Parameter Input Capacitance Output Capacitance Conditions VIN = 0V VOUT = 0V Max. 6 8 Unit pF pF
Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 5.0V.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter VOH VOL VIH VIL ILI Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) Input Leakage Test Conditions VDD = Min., IOH = –1.0 mA VDD = Min., IOL = 2.1 mA Options Min. 2.4 — 2.2 -0.5 -1 -2 -5 -1 -2 -5 Max. — 0.4 VDD + 0.5 0.8 1 2 5 1 2 5 Unit V V V V µA
GND ≤ VIN ≤ VDD GND ≤ VOUT ≤ VDD CE1 = VIH, or CE2 = VIL, or OE = VIH or WE = VIL
ILO
Output Leakage
Com. Ind. Auto. Com. Ind. Auto.
µA
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C 01/24/05
3
IS62C1024AL IS65C1024AL
IS62C1024AL/IS65C1024AL POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter ICC Average operating Current VDD Dynamic Operating Supply Current Test Conditions CE1 = VIL, CE2 = VIH VIN = VIH or VIL, I I/O= 0 mA VDD = Max., CE1 = VIL IOUT = 0 mA, f = fMAX VIN =.