UT7C138

Standard Products UT7C138/139 4Kx8/9 Radiation-Hardened Dual-Port Static RAM with Busy Flag Data Sheet January 2002 FEATURES q 45ns and 55ns maximum address access time q Asynchronous operation for compatibility with industrystandard 4K x 8/9 dual-port static RAM www.DataSheet4U.com q CMOS compatible inputs, TTL/CMOS compatible output levels q Three-state bidirectional data bus q Low operating and standby current q Radiation-hardened process and design; total dose irradiation testing to MIL-STD-883 Method 1019 - Total-dose: 1.0E6 rads(Si) - Memory Cell LET threshold: 85 MeV-cm2 /mg q q - Latchup immune (LET >100 MeV-cm2 /mg) QML Q and QML V compliant part Packaging options: - 68-lead Flatpack - 68-pin PGA 5-volt operation Standard Microcircuit Drawing 5962-96845 INTRODUCTION The UT7C138 and UT7C139 are high-speed radiationhardened CMOS 4K x 8 and 4K x 9 dual-port static RAMs. Arbitration schemes are included on the UT7C138/139 to handle situations when multiple processors access the same memory location. Two ports provide independent, asynchronous access for reads and writes to any location in memory. The UT7C138/139 can be utilized as a stand-alone 32/36-Kbit dual-port static RAM or multiple devices can be combined in order to function as a 16/18-bit or wider master/ slave dual-port static RAM. For applications that require depth expansion, the BUSY pin is open-collector allowing for wired OR circuit configuration. An M/S pin is provided for implementing 16/18-bit or wide...