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IS61NVP12818A

ISSI

(IS61NVPxxxxxA) STATE BUS SRAM

IS61NLP6432A IS61NLP6436A/IS61NVP6436A IS61NLP12818A/IS61NVP12818A 64K x 32, 64K x 36, and 128K x 18 2Mb, PIPELINE 'NO W...


ISSI

IS61NVP12818A

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IS61NLP6432A IS61NLP6436A/IS61NVP6436A IS61NLP12818A/IS61NVP12818A 64K x 32, 64K x 36, and 128K x 18 2Mb, PIPELINE 'NO WAIT' STATE BUS SRAM ISSI SEPTEMBER 2005 ® PRELIMINARY INFORMATION FEATURES www.DataSheet4U.com DESCRIPTION The 2 Meg 'NLP/NVP' product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, 'no wait' state, device for networking and communications applications. They are organized as 64K words by 32 bits, 64K words by 36 bits, and 128K words by 18 bits, fabricated with ISSI's advanced CMOS technology. Incorporating a 'no wait' state feature, wait cycles are eliminated when the bus switches from read to write, or write to read. This device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers are controlled by a positive-edge-triggered single clock input. Operations may be suspended and all synchronous inputs ignored when Clock Enable, CKE is HIGH. In this state the internal device will hold their previous values. All Read, Write and Deselect cycles are initiated by the ADV input. When the ADV is HIGH the internal burst counter is incremented. New external addresses can be loaded when ADV is LOW. Write cycles are internally self-timed and are initiated by the rising edge of the clock inputs and when WE is LOW. Separate byte enables allow individual bytes to be written. A burst mode pin...




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