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IS61NLP12832A

ISSI

(IS61NVPxxxxxA) STATE BUS SRAM

IS61NLP12832A IS61NLP12836A/IS61NVP12836A IS61NLP25618A/IS61NVP25618A 128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE ...


ISSI

IS61NLP12832A

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Description
IS61NLP12832A IS61NLP12836A/IS61NVP12836A IS61NLP25618A/IS61NVP25618A 128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE 'NO WAIT' STATE BUS SRAM ISSI ® PRELIMINARY INFORMATION SEPTEMBER 2005 FEATURES www.DataSheet4U.com DESCRIPTION The 4 Meg 'NLP/NVP' product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, 'no wait' state, device for networking and communications applications. They are organized as 128K words by 32 bits, 128K words by 36 bits, and 256K words by 18 bits, fabricated with ISSI's advanced CMOS technology. Incorporating a 'no wait' state feature, wait cycles are eliminated when the bus switches from read to write, or write to read. This device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers are controlled by a positive-edge-triggered single clock input. Operations may be suspended and all synchronous inputs ignored when Clock Enable, CKE is HIGH. In this state the internal device will hold their previous values. All Read, Write and Deselect cycles are initiated by the ADV input. When the ADV is HIGH the internal burst counter is incremented. New external addresses can be loaded when ADV is LOW. Write cycles are internally self-timed and are initiated by the rising edge of the clock inputs and when WE is LOW. Separate byte enables allow individual bytes to be written. A burst m...




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