D2141

Equivalent circuit C Built-in Avalanche Diode for Surge Absorbing Darlington 2SD2141 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=330V VEB=6V IC=25mA VCE=2V, IC=3A IC=4A, IB=20mA VCE=12V, IE=–0.5A VCB=10V, f=1MHz 2SD2141 10max 20max 330 to 430 1500min 1.5max 20typ 95typ V MHz pF 13.0min B (1.5k Ω)(100 Ω) E Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2141 380±50 380±50 6 6(Pulse10) 1 35(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Ignitor, Driver for Solenoid and Motor, and General Purpose (Ta=25°C) Unit External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 µA V 16.9±0.3 8.4±0.2 mA 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 www.DataSheet4U.com 2.54 3.9 B C E ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 10 0 15 m V CE ( sat ) – I B Characteristics (Typical) 3 I C – V BE Temperature Characteristics (Typical) 10 (V C E =4V) 120mA A 90mA 60mA A 20m mA 18 Collector Current I C (A) Collector Current I C (A) 2mA 2 Collector Current I C (A) 4mA 5 p) Tem ase (C 1A 5˚C C (C 0 0 2 4 6 0 0.2 0.5 1 5 10 50 100 200 0 0 1.0 Base-Emittor Voltage V B E (V) –30˚C 25˚ 12 (Case as 1 eT 3A Temp em 5A p) ) I B =1 mA I C =7A 5 2.0 2.4 Collector-Emitter Voltage V C E (V) Base Current I B (...