Equivalent circuit
C
Built-in Avalanche Diode for Surge Absorbing Darlington
2SD2141
sElectrical Characteristics
Symb...
Equivalent circuit
C
Built-in Avalanche Diode for Surge Absorbing Darlington
2SD2141
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=330V VEB=6V IC=25mA VCE=2V, IC=3A IC=4A, IB=20mA VCE=12V, IE=–0.5A VCB=10V, f=1MHz 2SD2141 10max 20max 330 to 430 1500min 1.5max 20typ 95typ V MHz pF
13.0min
B
(1.5k Ω)(100 Ω) E
Silicon
NPN Triple Diffused Planar
Transistor sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2141 380±50 380±50 6 6(Pulse10) 1 35(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Ignitor, Driver for Solenoid and Motor, and General Purpose
(Ta=25°C) Unit
External Dimensions FM20(TO220F)
4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5
µA
V
16.9±0.3 8.4±0.2
mA
1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2
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2.54
3.9 B C E
±0.2
0.8±0.2
a b
ø3.3±0.2
Weight : Approx 2.0g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
10
0 15 m
V CE ( sat ) – I B Characteristics (Typical)
3
I C – V BE Temperature Characteristics (Typical)
10 (V C E =4V)
120mA
A
90mA 60mA
A 20m mA 18
Collector Current I C (A)
Collector Current I C (A)
2mA
2
Collector Current I C (A)
4mA
5
p) Tem
ase
(C
1A
5˚C
C (C
0
0
2
4
6
0
0.2
0.5
1
5
10
50
100 200
0
0
1.0 Base-Emittor Voltage V B E (V)
–30˚C
25˚
12
(Case
as
1
eT
3A
Temp
em
5A
p)
)
I B =1 mA
I C =7A
5
2.0
2.4
Collector-Emitter Voltage V C E (V)
Base Current I B (...