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SILICON TRANSISTORS. CSC1009 Datasheet

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SILICON TRANSISTORS. CSC1009 Datasheet






CSC1009 TRANSISTORS. Datasheet pdf. Equivalent




CSC1009 TRANSISTORS. Datasheet pdf. Equivalent





Part

CSC1009

Description

PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS



Feature


Continental Device India Limited An ISO/ TS 16949, ISO 9001 and ISO 14001 Certif ied Company PNP/NPN EPITAXIAL PLANAR S ILICON TRANSISTORS CSA709 PNP CSC1009 NPN TO-92 CBE www.DataSheet4U.com Hig h Voltage Amplifier. ABSOLUTE MAXIMUM R ATINGS(Ta=25deg C ) DESCRIPTION SYMBOL CSA709 CSC1009 VCBO 160 160 Collector - Base Voltage VCEO 150 140 Collector -Em itter Voltage VEBO.
Manufacture

CDIL

Datasheet
Download CSC1009 Datasheet


CDIL CSC1009

CSC1009; 8.0 8.0 Emitter -Base Voltage IC 700 70 0 Collector Current PC 800 800 Collecto r Dissipation Tj, Tstg -55 to +150 -55 to +150 Operating And Storage Junction Temperature Range ELECTRICAL CHARACTERI STICS (Ta=25 deg C Unless Otherwise Spe cified) DESCRIPTION SYMBOL TEST CONDITI ON CSA709 CSC1009 VCBO IC=100uA.IE=0 >1 60 >160 Collector -Base Voltage VCEO IC =10mA,IB=0 >150 >1.


CDIL CSC1009

40 Collector -Emitter Voltage VEBO IE=10 0uA, IC=0 >8.0 >8.0 Emitter-Base Voltag e ICBO VCB=60V, IE=0 <100 Collector-Cut off Current VCB=100V, IE=0 <100 IEBO V EB=5V, IC=0 <100 <100 Emitter-Cut off C urrent hFE* IC=50mA,VCE=2V 40-400 40-40 0 DC Current Gain <0.4 <0.7 Collector E mitter Saturation Voltage VCE(Sat)* IC= 200mA,IB=20mA VBE(Sat) * IC=200mA,IB=20 mA <1.1 <1.1 Base .


CDIL CSC1009

Emitter Saturation Voltage DYNAMIC CHARA CTERISTICS Transition Frequency Out-Put Capacitance UNIT V V V mA mW deg C UN IT V V V nA nA nA V V ft Cob IC=50mA, VCE=10V VCB=10V, IE=0 f=1MHz typ50 <1 0 >30 typ8.0 MHz pF *hFE CLASSIFICAT ION CSC1009 R : 40 - 80 CSA709 *Pulse Test: PW=350us, Duty Cycle=2% O : 70 - 140 O : 70 -140 Y : 120-240 Y : 120-24 0 G: 200-400 G: 2.

Part

CSC1009

Description

PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS



Feature


Continental Device India Limited An ISO/ TS 16949, ISO 9001 and ISO 14001 Certif ied Company PNP/NPN EPITAXIAL PLANAR S ILICON TRANSISTORS CSA709 PNP CSC1009 NPN TO-92 CBE www.DataSheet4U.com Hig h Voltage Amplifier. ABSOLUTE MAXIMUM R ATINGS(Ta=25deg C ) DESCRIPTION SYMBOL CSA709 CSC1009 VCBO 160 160 Collector - Base Voltage VCEO 150 140 Collector -Em itter Voltage VEBO.
Manufacture

CDIL

Datasheet
Download CSC1009 Datasheet




 CSC1009
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS
CSA709 PNP
CSC1009 NPN
TO-92
CBE
www.DataSheet4U.com
High Voltage Amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C )
DESCRIPTION
SYMBOL
CSA709
CSC1009
Collector -Base Voltage
VCBO
160 160
Collector -Emitter Voltage
VCEO
150 140
Emitter -Base Voltage
VEBO
8.0 8.0
Collector Current
IC 700 700
Collector Dissipation
PC
800 800
Operating And Storage Junction
Tj, Tstg
-55 to +150
-55 to +150
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION CSA709 CSC1009
Collector -Base Voltage
VCBO IC=100uA.IE=0
>160
>160
Collector -Emitter Voltage
VCEO
IC=10mA,IB=0
>150
>140
Emitter-Base Voltage
VEBO
IE=100uA, IC=0
>8.0 >8.0
Collector-Cut off Current
ICBO
VCB=60V, IE=0
- <100
VCB=100V, IE=0
<100
-
Emitter-Cut off Current
IEBO
VEB=5V, IC=0
<100
<100
DC Current Gain
hFE*
IC=50mA,VCE=2V
40-400 40-400
Collector Emitter Saturation Voltage VCE(Sat)* IC=200mA,IB=20mA <0.4
<0.7
Base Emitter Saturation Voltage
VBE(Sat) * IC=200mA,IB=20mA <1.1
<1.1
DYNAMIC CHARACTERISTICS
Transition Frequency
ft
IC=50mA, VCE=10V typ50
>30
Out-Put Capacitance
Cob VCB=10V, IE=0
<10 typ8.0
f=1MHz
UNIT
V
V
V
mA
mW
deg C
UNIT
V
V
V
nA
nA
nA
V
V
MHz
pF
*hFE CLASSIFICATION CSC1009 R : 40 - 80
CSA709
-
*Pulse Test: PW=350us, Duty Cycle=2%
O : 70 -140
O : 70 -140
Y : 120-240
Y : 120-240
G: 200-400
G: 200-400
Continental Device India Limited
Data Sheet
Page 1 of 3




 CSC1009
TO-92 Plastic Package
B TO-92 Transistors on Tape and Ammo Pack
321
www.DataSheet4U.com
D AA
G
D
SEC AA
21
3
FF
321
PIN CONFIGURATION
1. COLLECTOR
2. BASE
3. EMITTER
DIM MIN. MAX.
A 4.32 5.33
B 4.45 5.20
C 3.18 4.19
D 0.41 0.55
E 0.35 0.50
F 5 DEG
G 1.14 1.40
H 1.14 1.53
K 12.70
M EC H AN IC AL D ATA
T
hh
A
P
A1
(p)
Ammo Pack Style
Ad hesive Tape on To p Sid e
FLAT SIDE
LABEL
FEED
C arrier
Strip
8.2"
H1
H0
L
W2
Wo W1
W
t1
t
F1
F
P2
F2
Do
1.77"
Po
All dimensions in mm unless specified otherwise
13"
Flat S ide of Transistor and
Ad hesive Tape Visib le
2000 pcs./A m mo P ack
ITEM
BODY WIDTH
BODY HEIGHT
BODY THICKNESS
PITCH OF COMPONENT
FEED HOLE PITCH
SYMBOL
A1
A
T
P
Po
FEED HOLE CENTRE TO
COMPONENT CENTRE
DISTANCE BETW EEN OUTER
LEADS
COMPONENT ALIGNMENT
TAPE W IDTH
HOLD-DOW N TAPE W IDTH
HOLE POSITION
P2
F
h
W
Wo
W1
HO LD-DO W N TAPE POSIT IO N
LEAD WIRE CLINCH HEIGHT
COMPONENT HEIGHT
LENGTH OF SNIPPED LEADS
FEED HOLE DIAMETER
TO TAL TAPE THIC KNESS
LEAD - TO - LEAD DISTANCEF 1,
CLINCH HEIGHT
PULL - OUT FORCE
W2
Ho
H1
L
Do
t
F2
H2
(P)
S P EC IFIC ATIO N
MIN. NOM. MAX.
4.0
4.8
3.9
12.7
12.7
4.8
5.2
4.2
TOL .
±1
± 0.3
6.35 ± 0.4
+0.6
5.08 -0.2
01
18 ± 0.5
6 ± 0.2
9 +0.7
-0.5
0.5 ± 0.2
16 ± 0.5
23.25
11.0
4 ± 0.2
1.2
2.54 +0.4
-0.1
3
6N
REMARKS
CUMULATIVE PITCH
ERROR 1.0 mm/20
PITCH
TO BE MEASURED AT
BOTTOM OF CLINCH
AT TOP OF BODY
t1 0.3 - 0.6
NOTES
1. M AX IM UM A LIGN M EN T D EV IAT ION BE TW E EN LEAD S N O T TO BE G R EATER TH AN 0.2 m m .
2. M AX IM UM N O N-C U M ULATIVE VAR IATIO N B ETW E EN TA PE FEE D H OLE S S HA LL NO T E XC EED 1 m m IN 20
P IT C H E S .
3. HOLDDOW N TAPE NOT TO EXCEED BEYOND THE EDGE(S) OF CARRIER TAPE AND THERE SHALL BE NO
EXPOSURE OF ADHESIVE.
4. N O M O R E TH AN 3 CO N SE CU TIVE M ISS IN G CO M P ON EN TS ARE PE RM ITT ED .
5. A TAP E TR AILE R, H AVIN G AT LE AS T TH RE E FE ED HO LES AR E R EQ UIR ED AF TER THE LAS T CO M PO N EN T.
6. SPLICES SHALL NOT INTERFERE W ITH THE SPROCKET FEED HOLES.
Packing Detail
PACKAGE
STANDARD PACK
Details
Net Weight/Qty
TO-92 Bulk
TO-92 T&A
1K/polybag
200 gm/1K pcs
2K/ammo box 645 gm/2K pcs
INNER CARTON BOX
Size Qty
3" x 7.5" x 7.5"
12.5" x 8" x 1.8"
5.0K
2.0K
OUTER CARTON BOX
Size Qty Gr Wt
17" x 15" x 13.5"
17" x 15" x 13.5"
80.0K 23 kgs
32.0K 12.5 kgs
Continental Device India Limited
Data Sheet
Page 2 of 3




 CSC1009
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Customer Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web
Site/CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
email@cdil.com www.cdilsemi.com
Continental Device India Limited
Data Sheet
Page 3 of 3






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