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POWER TRANSISTOR. CSC1061 Datasheet

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POWER TRANSISTOR. CSC1061 Datasheet






CSC1061 TRANSISTOR. Datasheet pdf. Equivalent




CSC1061 TRANSISTOR. Datasheet pdf. Equivalent





Part

CSC1061

Description

NPN EPITAXIAL SILICON POWER TRANSISTOR



Feature


Continental Device India Limited An ISO/ TS 16949, ISO 9001 and ISO 14001 Certif ied Company TO-220 Plastic Package CS C1061 CSC1061 www.DataSheet4U.com NPN PLASTIC POWER TRANSISTOR Low frequenc y Power Amplifier PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECT OR 4 1 2 3 B H F C E DIM A B C D E F G H J K L M N O M IN. 14.42 9.63 3 .56 M A X. N L .
Manufacture

CDIL

Datasheet
Download CSC1061 Datasheet


CDIL CSC1061

CSC1061; O 1 2 3 D G J M 16.51 10.67 4.83 0. 90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3 .43 0.56 12.70 14.73 2.80 4.07 2.03 2.9 2 31.24 DE G 7 A O ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open em itter) Collector-emitter voltage (open base) Collector current Total power dis sipation up to TC = 25°C Junction temp erature Collector-emitter saturation vo ltage IC = 2A; IB =.


CDIL CSC1061

0.2A D.C. current gain IC = 1A; VCE = 4 V All dim insions in m m . K VCBO VC EO IC Ptot Tj VCEsat hFE max. max. max . max. max. max. min. max. 50 50 3.0 2 5 150 V V A W °C 1.0 V 35 320 RATIN GS (at TA=25°C unless otherwise specif ied) Limiting values Collector-base vol tage (open emitter) Collector-emitter v oltage (open base) Emitter-base voltage (open collector) Co.


CDIL CSC1061

llector current VCBO VCEO VEBO IC max. max. max. max. 50 50 4.0 3.0 V V V A Continental Device India Limited Dat a Sheet Page 1 of 3 CSC1061 Total po wer dissipation up to TC = 25°C Juncti on temperature Storage temperature www. DataSheet4U.com Ptot Tj Tstg max. 25 W max. 150 ºC –65 to +150 ºC CHARA CTERISTICS Tamb = 25°C unless otherwis e specified Collector cu.

Part

CSC1061

Description

NPN EPITAXIAL SILICON POWER TRANSISTOR



Feature


Continental Device India Limited An ISO/ TS 16949, ISO 9001 and ISO 14001 Certif ied Company TO-220 Plastic Package CS C1061 CSC1061 www.DataSheet4U.com NPN PLASTIC POWER TRANSISTOR Low frequenc y Power Amplifier PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECT OR 4 1 2 3 B H F C E DIM A B C D E F G H J K L M N O M IN. 14.42 9.63 3 .56 M A X. N L .
Manufacture

CDIL

Datasheet
Download CSC1061 Datasheet




 CSC1061
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
TO-220 Plastic Package
CSC1061
www.DataSheet4U.com
CSC1061 NPN PLASTIC POWER TRANSISTOR
Low frequency Power Amplifier
BF
C
E
12 3
D
G
J
M
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1
2
3
DIM MIN. MAX.
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D 0.90
E 1.15 1.40
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
J 0.56
K 12.70 14.73
L 2.80 4.07
M 2.03 2.92
N 31.24
O DEG 7
4
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current
Total power dissipation up to TC = 25°C
Junction temperature
Collector-emitter saturation voltage
IC = 2A; IB = 0.2A
D.C. current gain
IC = 1A; VCE = 4V
VCBO
VCEO
IC
Ptot
Tj
VCEsat
hFE
RATINGS (at TA=25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
VCBO
VCEO
VEBO
IC
max.
max.
max.
max.
max.
max.
min.
max.
50 V
50 V
3.0 A
25 W
150 °C
1.0 V
35
320
max.
max.
max.
max.
50 V
50 V
4.0 V
3.0 A
Continental Device India Limited
Data Sheet
Page 1 of 3




 CSC1061
CSC1061
www.DataSheet4U.com
Total power dissipation up to TC = 25°C
Junction temperature
Storage temperature
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IE = 0; VCB = 20V
Breakdown voltages
IC = 50 mA; IB = 0
IC = 5 mA; IE = 0
IE = 5 mA; IC = 0
Saturation voltages
IC = 2 A; IB = 0.2 A
Base emitter on voltage
IC = 1 A; VCE = 4 V
D.C. current gain
IC = 0.1A; VCE = 4V
Ptot
max.
25 W
Tj max. 150 ºC
Tstg –65 to +150 ºC
ICBO
VCEO
VCBO
VEBO
VCEsat
VBE(on)
hFE
max.
min.
min.
min.
max.
max.
min.
100 µA
50 V
50 V
4.0 V
1.0 V
1.5 V
35
IC = 1A; VCE = 4V**
Transition frequency
IC = 0.5A; VCE = 4V
hFE
min.
35
max. 320
fT typ. 8 MHz
**hFE classification: A: 35-70 B: 60-120 C: 100-200 D: 160-320
Continental Device India Limited
Data Sheet
Page 2 of 3




 CSC1061
www.DataSheet4U.com
Customer Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
email@cdil.com www.cdilsemi.com
Continental Device India Limited
Data Sheet
Page 3 of 3






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