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CSC1162

CDIL

NPN EPITAXIAL SILICON POWER TRANSISTOR

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-126 (SOT-32) Plastic Pack...


CDIL

CSC1162

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-126 (SOT-32) Plastic Package CSC1162 CSC1162 NPN PLASTIC POWER TRANSISTOR Complementary CSA715 Low frequency Power Amplifier www.DataSheet4U.com PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ALL DIMENSIONS IN MM ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25 C Junction temperature Collector-emitter saturation voltage IC = 2A; IB = 0.2A D.C. current gain IC = 0.5A; VCE = 2V VCBO VCEO IC Ptot Tj VCEsat hFE max. max. max. max. max. max. min. max. 35 35 2.5 10 150 V V A W C 1.0 V 60 320 RATINGS (at TA=25 C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) VCBO VCEO max. max. 35 V 35 V Continental Device India Limited Data Sheet Page 1 of 3 CSC1162 www.DataSheet4U.com Emitter-base voltage (open collector) Collector current Collector current (Peak) Total power dissipation up to TA = 25 C Total power dissipation up to T C = 25 C Junction temperature Storage temperature CHARACTERISTICS T amb = 25 C unless otherwise specified Collector cutoff current IE = 0; VCB = 35V Breakdown voltages IC = 10 mA; IB = 0 IC = 1 mA; IE = 0 IE = 1 mA; IC = 0 Saturation voltage IC = 2 A; IB = 0.2 A Base-emitter on voltage IC = 1.5A; VCE = 2V (Pulse) D.C. current gain IC = 0.5 A; VCE = 2 V** IC = 1.5 A...




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