IPP13N03LBG

IPP13N03LB G OptiMOS®2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC1) for target application N-channel - Logic level Excellent gate charge x R DS(on) product (FOM) www.DataSheet4U.com Product Summary V DS R DS(on),max ID 30 12.8 30 V mΩ A Very low on-resistance R DS(on) Superior thermal resistance 175 °C operating temperature dv /dt rated Pb-free lead plating; RoHS compliant PG-TO220-3-1 Type IPP13N03LB G Package PG-TO220-3-1 Marking 13N03LB Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 30 30 120 64 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C3) I D=30 A, R GS=25 Ω I D=30 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C mJ kV/µs V W °C T C=25 °C 52 -55 ... 175 55/175/56 J-STD20 and JESD22 Rev. 0.93 page 1 2006-05-10 IPP13N03LB G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB www.DataSheet4U.com Values typ. max. Unit R thJC R thJA minimal footprint 6 cm2 cooling area5) - - 2.9 62 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate...