JS29F16G08FANB1

w w w . D a t a S h e e t 4 U . c o m Intel® SD74 NAND Flash Memory Product Features Single-level cell (SLC) Technology Organization: — Page size: x8: 2,112 bytes (2,048 + 64 bytes) — Block size: 64 pages (128K + 4K bytes) — Plane size: 2,048 blocks — Device size: 4Gb: 4,096 blocks; 8Gb: 8,192 blocks; 16Gb: 16,384 blocks Read performance: — Random read: 25µs (MAX) — Sequential read: 25ns (MIN) Write performance: — Page program: 220µs (TYP) — Block erase: 1.5ms (TYP) Data Retention: — 10 years Endurance: — 100,000 PROGRAM/ERASE cycles First block (block address 00h): — Guaranteed to be valid up to 1,000 PROGRAM/ERASE cycles Vcc: — 2.7V – 3.6V Operating Temperature: — –25 C to 85 C Command set: — Industry-standard basic NAND Flash command set o o JS29F04G08AANB1, JS29F08G08CANB1, JS29F16G08FANB1 Datasheet Advanced Command Set: — PROGRAM PAGE CACHE MODE — PAGE READ CACHE MODE — One-time programmable (OTP) commands — Two-plane commands — Interleaved die operation — READ UNIQUE ID (contact factory) — READ ID2 (contact factory) — Internal Data Move: Operations supported within the plane from which data is read Operation status byte: — Provides software method for detecting: — Operation completion — Pass/fail condition — Write-protect status Ready/busy# (R/B#) signal: — Provides a hardware method for detecting PROGRAM or ERASE cycle completion WP# signal: — Write protect entire device RESET: — Required after power-up Package Types: — 48-pin TSOP Type 1 — 48-pin TSOP OCPL Type 1 ...