SST31LF043

4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory SST31LF041 / SST31LF041A / SST31LF043 / SST31LF043A SST31LF041 / 041A4Mb Flash (x8) + 1 Mb SRAM (x8) ComboMemories Data Sheet FEATURES: Monolithic Flash + SRAM ComboMemory – SST31LF041/041A: 512K x8 Flash + 128K x8 SRAM – SST31LF043/043A: 512K x8 Flash + 32K x8 SRAM Single 3.0-3.6V Read and Write Operations Concurrent Operation – Read from or write to SRAM while Erase/Program Flash Superior Reliability – Endurance: 100,000 Cycles (typical) www.DataSheet4U.com – Greater than 100 years Data Retention Low Power Consumption: – Active Current: 10 mA (typical) for Flash and 20 mA (typical) for SRAM Read – Standby Current: 10 µA (typical) Flash Sector-Erase Capability – Uniform 4 KByte sectors Latched Address and Data for Flash Fast Read Access Times: – SST31LF041/043 Flash: 70 ns SRAM: 70 ns – SST31LF041A/043A Flash: 300 ns SRAM: 300 ns Flash Fast Erase and Byte-Program: – Sector-Erase Time: 18 ms (typical) – Bank-Erase Time: 70 ms (typical) – Byte-Program Time: 14 µs (typical) – Bank Rewrite Time: 8 seconds (typical) Flash Automatic Erase and Program Timing – Internal VPP Generation Flash End-of-Write Detection – Toggle Bit – Data# Polling CMOS I/O Compatibility JEDEC Standard Command Set Packages Available – 32-lead TSOP (8 x 14 mm) SST31LF041A/043A – 40-lead TSOP (10 x 14 mm) SST31LF041/043 PRODUCT DESCRIPTION The SST31LF041/041A/043/043A devices are a 512K x8 CMOS flash memory bank combined with a...