Document
E ES S II
Excel Semiconductor inc.
ES29LV400D
4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
www.DataSheet4U.com
GENERAL FEATURES
• Single power supply operation - 2.7V -3.6V for read, program and erase operations
• Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC
SOFTWARE FEATURES
• Sector Structure - 16Kbyte x 1, 8Kbyte x 2, 32Kbyte x 1 boot sectors - 64Kbyte x 7sectors • Top or Bottom boot block - ES29LV400DT for Top boot block device - ES29LV400DB for Bottom boot block device • Package Options - 48-pin TSOP - 48-ball FBGA ( 6 x 8 mm ) - Pb-free packages - All Pb-free products are RoHS-Compliant • Low Vcc write inhibit • Manufactured on 0.18um process technology • Compatible with JEDEC standards - Pinout and software compatible with single-power supply flash standard • • • • • Erase Suspend / Erase Resume Data# poll and toggle for Program/erase status Unlock Bypass program Autoselect mode Auto-sleep mode after tACC + 30ns
HARDWARE FEATURES
• Hardware reset input pin ( RESET#) - Provides a hardware reset to device - Any internal device operation is terminated and the device returns to read mode by the reset • Ready/Busy# output pin ( RY/BY#) - Provides a program or erase operational status about whether it is finished for read or still being progressed • Sector protection / unprotection ( RESET# , A9 ) - Hardware method of locking a sector to prevent any program or erase operation within that sector - Two methods are provided : - In-system method by RESET# pin - A9 high-voltage method for PROM programmers • Temporary Sector Unprotection ( RESET# ) - Allows temporary unprotection of previously protected sectors to change data in-system
DEVICE PERFORMANCE
• Read access time - 70ns for regulated Vcc range (3.0V - 3.6V) - 90ns/120n for normal Vcc range ( 2.7V - 3.6V ) • Program and erase time - Program time : 6us/byte, 8us/word ( typical ) - Sector erase time : 0.7sec/sector ( typical ) • Power consumption (typical values) - 200nA in standby or automatic sleep mode - 7mA active read current at 5 MHz - 15mA active write current during program or erase
ES29LV400D
1
Rev.1C January 5, 2006
E ES S II
Excel Semiconductor inc.
GENERAL PRODUCT DESCRIPTION
www.DataSheet4U.com
The ES29LV400 is a 4 megabit, 3.0 volt-only flash memory device, organized as 512K x 8 bits (Byte mode) or 256K x 16 bits (Word mode) which is configurable by BYTE#. Four boot sectors and seven main sectors are provided : 16Kbytes x 1, 8Kbytes x 2, 32Kbytes x 1 and 64Kbytes x 7. The device is manufactured with ESI’s proprietary, high performance and highly reliable 0.18um CMOS flash technology. The device can be programmed or erased in-system with standard 3.0 Volt Vcc supply ( 2.7V-3.6V) and can also be programmed in standard EPROM programmers. The device offers minimum endurance of 100,000 program/erase cycles and more than 10 years of data retention. The ES29LV400 offers access time as fast as 70ns, allowing opera.