K2372 Datasheet: 2SK2372





K2372 2SK2372 Datasheet

Part Number K2372
Description 2SK2372
Manufacture NEC
Total Page 8 Pages
PDF Download Download K2372 Datasheet PDF

Features: DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2371/2SK2372 SWITCHING N-CHANNEL P OWER MOS FET INDUSTRIAL USE DESCRIPTIO N The 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor www.DataSheet4U .com PACKAGE DIMENSIONS (in millimeter s) designed for high voltage switching applications. FEATURES • Low On-Res istance 20.0 ± 0.2 1.0 15.7 MAX. 4 3 .2 ± 0.2 4.7 MAX. 1.5 7.0 2SK2368: R DS(ON) = 0.27 Ω (VGS = 13 V, ID = 10 A) • Low Ciss Ciss = 3600 pF TYP. • High Avalanche Capability Ratings 1 3 .0 ± 0.2 2 3 ABSOLUTE MAXIMUM RATIN GS (TA = 25 °C) Drain to Source Voltag e (2SK2371/2SK2372) VDSS Gate to Source Voltage Drain Current (DC) Drain Curre nt (pulse)* Total Power Dissipation (TC = 25 °C) Total Power Dissipation (Ta = 25 °C) Channel Temperature Storage T emperature Single Avalanche Current** S ingle Avalanche Energy** * PW ≤ 10 µ s, Duty Cycle ≤ 1 % ** Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 19 MIN. 450/500 ± 30 ± 25 ± 100 160 3.0 150 –55 ~ +150 25 446 V V A A W W °C °C A mJ.

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DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2371/2SK2372
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor
www.DataSheet4U.com designed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeters)
FEATURES
• Low On-Resistance
2SK2367: RDS(ON) = 0.25 (VGS = 13 V, ID = 10 A)
2SK2368: RDS(ON) = 0.27 (VGS = 13 V, ID = 10 A)
• Low Ciss Ciss = 3600 pF TYP.
• High Avalanche Capability Ratings
15.7 MAX. 3.2 ± 0.2
4
1 23
4.7 MAX.
1.5
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (2SK2371/2SK2372) VDSS 450/500 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±25
A
Drain Current (pulse)*
ID(pulse)
±100
A
Total Power Dissipation (TC = 25 °C) PT1 160 W
Total Power Dissipation (Ta = 25 °C) PT2 3.0 W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg –55 ~ +150 °C
Single Avalanche Current**
IAS 25 A
Single Avalanche Energy**
EAS 446 mJ
* PW 10 µs, Duty Cycle 1 %
** Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device is actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
2.2 ± 0.2
5.45
1.0 ± 0.2
5.45
MP-88
0.6 ± 0.1 2.8 ± 0.1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Drain
Gate
Body
Diode
Source
Document No. TC-2505
(O.D. No. TC-8064
Date Published January 1995 P
Printed in Japan
© 1995

                    
  






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