Bipolar IC. AN7523N Datasheet

AN7523N IC. Datasheet pdf. Equivalent

Part AN7523N
Description Silicon Monolithic Bipolar IC
Feature Prepared Checked Approved Product Specifications Ref No. Total Page Page No. A-1 9 1 AN7523N Sil.
Manufacture Matsudhita
Datasheet
Download AN7523N Datasheet



AN7523N
Prepared
Checked
Approved
Product Specifications
AN7523N
Ref No.
Total Page
Page No.
A-1
9
1
Structure
Appearance
Application
Function
Silicon Monolithic Bipolar IC
SIL-9 Pin Plastic Package (Power Type with Fin)
Low Frequency Amplifier
BTL 4.0W x 1ch Power Amplifier
with Standby Function and Volume Function
A Absolute Maximum Ratings
No. Item
Symbol Ratings
Unit Note
1 Storage Temperature
Tstg -55 ~ +150 °C 1
2 Operating Ambient Temperature Topr
-25 ~ +70
°C
3 Operating Ambient Pressure
Popr
1.013x105±0.61x105 Pa
(1.0±0.6)
(atm)
4 Operating Constant Acceleration Gopr
9,810
(1000)
m/s2
(G)
5 Operating Shock
Sopr
4,900
(500)
m/s2
(G)
6 Supply Voltage
Vcc 14.4
V
1
2
7 Supply Current
Icc 1.0 A
8 Power Dissipation
PD 1.22 W Ta=70°C
Operating Supply Voltage Range
Vcc
3.5V ~ 13.5V
Note 1) The temperature of all items shall be Ta=25°C except storage temperature and
operating ambient temperature.
2) At no signal input.
Eff. Date Eff. Date Eff. Date
25-APR-2000 21-JUL-2000
FMSC-PSDA-002-01
Eff. Date
Matsushita Electronics Corporation



AN7523N
Prepared
Checked
Approved
Product Specifications
AN7523N
Ref No.
Total Page
Page No.
B-1
9
2
B
Electrical Characteristics
(Unless otherwise specified, the ambient temperature is 25°C±2˚C,
Vcc=8.0V, frequency=1kHz and RL=8.)
No Item
Test
Symbol Cir- Conditions
cuit
Limits
min typ max Unit Note
1
Quiescent Circuit
Current
ICQ
1 Vin=0V, Vol=0V
- 20 60
mA
2 Standby Current ISTB 1 Vin=0V, Vol=0V
- 1 10
µA
3
Output Noise
Voltage
VNO 1 Rg=10k, Vol=0V
- 0.10 0.4 mVrms 1
4 Voltage Gain
GV 1 Po=0.5W, Vol=1.25V
31 33 35
dB
5
Total Harmonic
Distortion
6
Maximum Power
Output 1
7
Maximum Power
Output 2
8
Ripple Rejection
Ratio
9
Output Offset
Voltage
10
Volume
Attenuation Ratio
11
Middle Voltage
Gain
THD
PO1
PO2
RR
Voff
Att
GVm
1 Po=0.5W, Vol=1.25V
1 THD=10%, Vol=1.25V
1
Vcc=9V
THD=10%, Vol=1.25V
1
Rg=10k, Vol=0V
Vr=0.5Vrms, fr=120Hz
1 Rg=10k, Vol=0V
1 Po=0.5W, Vol=0V
1 Po=0.5W, Vol=0.6V
- 0.10 0.5
2.4 3.0 -
3.2 4.0 -
30 50 -
-250 0 250
70 85 -
20.5 23.5 26.5
%
W
W
dB 1
mV
dB 1
dB
Note 1) For this measurement, use the BPF = 15Hz ~ 30kHz (12dB/OCT).
Eff. Date Eff. Date Eff. Date
25-APR-2000 21-JUL-2000
FMSC-PSDA-002-01
Eff. Date
Matsushita Electronics Corporation







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