BAS716

DISCRETE SEMICONDUCTORS DATA SHEET www.DataSheet4U.com M3D319 BAS716 Low-leakage diode Product specification 2003 Nov 07 Philips Semiconductors Product specification Low-leakage diode FEATURES Plastic SMD package Low leakage current: typ. 0.2 nA Switching time: typ. 0.6 µs Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 85 V www.DataSheet4U.com BAS716 PINNING Repetitive peak forward current: max. 500 mA. APPLICATION Low leakage current applications in surface mounted circuits. DESCRIPTION Epitaxial medium-speed switching diode with a low leakage current in an ultra small SOD523 (SC-79) SMD plastic package. ORDERING INFORMATION handbook, halfpage1 Marking code: S1. The marking bar indicates the cathode. 
1 2 Top view PIN DESCRIPTION cathode anode 2 MAM408 Fig.1 Simplified outline (SOD523; SC-79) and symbol. PACKAGE TYPE NUMBER NAME BAS716 − DESCRIPTION plastic surface mounted package; 2 leads VERSION SOD523 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 tp = 1 µs tp = 1 ms tp = 1 s Ptot Tstg Tj Note 1. Device mounted on a FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 − − − − −6...