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2SK3017. K3017 Datasheet

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2SK3017. K3017 Datasheet






K3017 2SK3017. Datasheet pdf. Equivalent




K3017 2SK3017. Datasheet pdf. Equivalent





Part

K3017

Description

2SK3017

Manufacture

Toshiba Semiconductor

Datasheet
Download K3017 Datasheet


Toshiba Semiconductor K3017

K3017; 2SK3017 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII ) 2SK3017 DC−DC Converter, Relay Dri ve and Motor Drive Applications z Low d rain−source ON resistance z High forw ard transfer admittance z Low leakage c urrent z Enhancement mode www.DataSheet 4U.com : RDS (ON) = 1.05 Ω (typ.) : | Yfs| = 7.0 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 720 V) .


Toshiba Semiconductor K3017

: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA ) Absolute Maximum Ratings (Ta = 25°C ) Characteristics Drain−source voltag e Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP P D EAS IAR EAR Tch Tstg Rating 900 900 30 8.5 25.5 90 966 8.5 9 150 −55~150 Unit V V V A A W mJ A mJ °C °C Puls e (Note 1) Drain power dissipat.


Toshiba Semiconductor K3017

ion (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repet itive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA — — 2-16F1B Weight: 5.8 g (typ.) Note: Using conti nuously under heavy loads (e.g. the app lication of high temperature/current/vo ltage and the significant change in tem perature, etc.) may cau.



Part

K3017

Description

2SK3017

Manufacture

Toshiba Semiconductor

Datasheet
Download K3017 Datasheet




 K3017
2SK3017
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK3017
DCDC Converter, Relay Drive and Motor Drive
Applications
Unit: mm
z Low drainsource ON resistance : RDS (ON) = 1.05 (typ.)
z High forward transfer admittance : |Yfs| = 7.0 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 720 V)
www.DataSheetz4U.cEonmhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
900
900
±30
8.5
25.5
90
966
8.5
9
150
55~150
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
2-16F1B
Weight: 5.8 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
1.39 °C / W
41.6 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 24.5 mH, RG = 25 , IAR = 8.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2006-11-10





 K3017
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Gatesource breakdown voltage
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
www.DataSheet4U.com
Reverse transfer capacitance
Output capacitance
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±30 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 720 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 4 A
VDS = 15 V, ID = 4 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Switching time
Turnon time
Fall time
ton
tf
Turnoff time
Total gate charge (Gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) charge
toff
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 8 A
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 8.5 A, VGS = 0 V
IDR = 8.5 A, VGS = 0 V
dIDR / dt = 100 A / μs
Marking
2SK3017
Min Typ. Max Unit
— — ±10
±30 —
— — 100
900 —
2.0 — 4.0
— 1.05 1.25
3.5 7.0
— 2150 —
— 35 —
— 220 —
μA
V
μA
V
V
S
pF
— 25 —
— 60 —
ns
— 25 —
— 120 —
— 70 —
— 37 —
— 33 —
nC
Min Typ. Max Unit
— — 8.5 A
— — 25.5 A
— — 1.9 V
— 1300 —
ns
— 14.5 —
μC
TOSHIBA
K3017
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-10





 K3017
www.DataSheet4U.com
2SK3017
3 2006-11-10



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