Rectifier Diode. 5SDD33L5500 Datasheet

5SDD33L5500 Diode. Datasheet pdf. Equivalent

Part 5SDD33L5500
Description Rectifier Diode
Feature VRSM IF(AV)M IF(RMS) IFSM VF0 rF = = = = = = 5500 3480 5470 46×103 0.94 0.147 V A A A V mΩ Recti.
Manufacture ABB
Datasheet
Download 5SDD33L5500 Datasheet




5SDD33L5500
VRSM =
IF(AV)M =
IF(RMS) =
IFSM =
VF0 =
rF =
5500 V
3480 A
5470 A
46×103 A
0.94 V
0.147 m
Rectifier Diode
5SDD 33L5500
Patented free-floating silicon technology
Very low on-state losses
www.DataSheet4UO.copmtimum power handling capability
Doc. No. 5SYA1168-00 March 05
Blocking
Maximum rated values 1)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Symbol Conditions
VRRM
f = 50 Hz, tp = 10ms, Tj = 0...150°C
VRSM
f = 5 Hz, tp = 10ms, Tj = 0...150°C
Characteristic values
Parameter
Max. (reverse) leakage current
Symbol Conditions
IRRM
VRRM, Tj = 150°C
min
typ
Value
5000
5500
Unit
V
V
max Unit
400 mA
Mechanical data
Maximum rated values 1)
Parameter
Mounting force
Acceleration
Acceleration
Symbol Conditions
FM
a Device unclamped
a Device clamped
min
63
typ
70
max
77
50
100
Unit
kN
m/s2
m/s2
Characteristic values
Parameter
Symbol Conditions
min typ
Weight
m
Housing thickness
Surface creepage distance
H
FM = 70 kN, Ta = 25 °C
26.0
DS 35
Air strike distance
Da
14
1) Maximum rated values indicate limits beyond which damage to the device may occur
max
1.45
26.6
Unit
kg
mm
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.



5SDD33L5500
On-state
Maximum rated values 1)
Parameter
Symbol Conditions
Max. average on-state
current
IF(AV)M 50 Hz, Half sine wave, TC = 90 °C
Max. RMS on-state current IF(RMS)
Max. peak non-repetitive
surge current
Limiting load integral
IFSM
I2t
tp = 10 ms, Tj = 150°C,
VR = 0 V
Max. peak non-repetitive
surge current
Limiting load integral
IFSM
I2t
tp = 8.3 ms, Tj = 150°C,
VR = 0 V
www.DataSheeCt4hUa.craomcteristic values
Parameter
On-state voltage
Threshold voltage
Slope resistance
Symbol Conditions
VF IF = 5000 A, Tj = 150°C
V(T0)
rT
Tj = 150°C
IT = 3000...8000 A
5SDD 33L5500
min typ max Unit
3480 A
5470 A
46×103 A
10.6×106 A2s
49.2×103 A
10.06×106 A2s
min typ max Unit
1.68 V
0.94 V
0.147 m
Switching
Characteristic values
Parameter
Recovery charge
Symbol Conditions
Qrr diF/dt = -10 A/µs, VR = 200 V
IFRM = 4000 A, Tj = 150°C
min typ max Unit
10000 µAs
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1168-00 March 05
page 2 of 6







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