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TSM9428

Taiwan Semiconductor Company

20V N-Channel MOSFET

TSM9428 20V N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 20 30 @ VGS = 4.5V 40 @ VGS = 2.5V SOP-8 Pin Definiti...


Taiwan Semiconductor Company

TSM9428

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Description
TSM9428 20V N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 20 30 @ VGS = 4.5V 40 @ VGS = 2.5V SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain ID (A) 6.0 5.2 www.DataSheet4U.com Features Block Diagram ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application ● ● Load Switch PA Switch Ordering Information Part No. TSM9428CS RL Package SOP-8 Packing 2.5Kpcs / 13” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 70 C Limit 20 ±8 6 20 1.7 2.5 1.6 +150 -55 to +150 Unit V V A A A W o o C C Thermal Performance Parameter Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 10 sec. Symbol RӨJF RӨJA Limit 30 50 Unit o o C/W C/W 1/6 Version: A07 TSM9428 20V N-Channel MOSFET Electrical Specifications Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current www.DataSheet4U.com Conditions VGS = 0V, ID = 250uA VDS = VGS, ...




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