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TSM9433

Taiwan Semiconductor Company

20V P-Channel MOSFET

TSM9433 20V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -20 45 @ VGS = -4.5V 70 @ VGS = -2.5V SOP-8 Pin Defin...


Taiwan Semiconductor Company

TSM9433

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Description
TSM9433 20V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -20 45 @ VGS = -4.5V 70 @ VGS = -2.5V SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain ID (A) -5.4 -4.2 www.DataSheet4U.com Features Block Diagram ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application ● ● Load Switch PA Switch Ordering Information Part No. TSM9433CS RL Package SOP-8 Packing 2.5Kpcs / 13” Reel P-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD Limit -20 ±12 -5.4 -20 -2.6 Unit V V A A A W o o Ta = 25 C Ta = 70 C 2.5 1.6 +150 - 55 to +150 TJ TJ, TSTG C C Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec. Symbol RӨJC RӨJA Limit 30 50 Unit o o C/W C/W 1/6 Version: A07 TSM9433 20V P-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current www.DataSheet4U.com Conditions VGS = 0V, ID...




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