TSM9933D

TSM9933D 20V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -20 65 @ VGS = -4.5V 100 @ VGS = -2.5V SOP-8 Pin Definition: 1. Source 1 8. Drain 2. Gate 1 7. Drain 3. Source 2 6. Drain 4. Gate 2 5. Drain 1 1 2 2 ID (A) -4.7 -3.8 www.DataSheet4U.com Features Block Diagram ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application ● ● Load Switch PA Switch Ordering Information Part No. TSM9933DCS RL Package SOP-8 Packing 2.5Kpcs / 13” Reel Dual P-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 70 C Limit -20 ±12 -4.7 -20 -1.7 2 1.3 +150 - 55 to +150 Unit V V A A A W o o C C Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec. Symbol RӨJC RӨJA Limit 30 80 Unit o o C/W C/W 1/6 Version: A07 TSM9933D 20V P-Channel MOSFET Electrical Specifications Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current www.DataSheet4U.com...