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BUK217-50YT Dataheets PDF



Part Number BUK217-50YT
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description TOPFET high side switch SMD version
Datasheet BUK217-50YT DatasheetBUK217-50YT Datasheet (PDF)

Philips Semiconductors Product specification TOPFET high side switch SMD version DESCRIPTION Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic surface mount package. BUK217-50YT QUICK REFERENCE DATA SYMBOL VBG IL Tj RON PARAMETER Continuous off-state supply voltage Continuous load current Continuous junction temperature On-state resistance Tj = 25˚C MAX. 50 10 150 14 UNIT V A ˚C mΩ APPLICATIONS www.DataSheet4U.com lamps, motors, G.

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Philips Semiconductors Product specification TOPFET high side switch SMD version DESCRIPTION Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic surface mount package. BUK217-50YT QUICK REFERENCE DATA SYMBOL VBG IL Tj RON PARAMETER Continuous off-state supply voltage Continuous load current Continuous junction temperature On-state resistance Tj = 25˚C MAX. 50 10 150 14 UNIT V A ˚C mΩ APPLICATIONS www.DataSheet4U.com lamps, motors, General controller for driving solenoids, heaters. FEATURES Vertical power TrenchMOS Low on-state resistance CMOS logic compatible Very low quiescent current Latched overtemperature protection Load current limiting at reduced level Short circuit load detection Overvoltage and undervoltage shutdown with hysteresis Diagnostic status indication Voltage clamping for turn off of inductive loads ESD protection on all pins Reverse battery, overvoltage and transient protection FUNCTIONAL BLOCK DIAGRAM BATT STATUS POWER MOSFET CONTROL & PROTECTION CIRCUITS LOAD GROUND RG INPUT Fig.1. Elements of the TOPFET HSS with internal ground resistor. PINNING - SOT426 PIN 1 2 3 4 5 mb DESCRIPTION Ground Input (connected to mb) Status Load Battery PIN CONFIGURATION mb SYMBOL I S 3 1 2 4 5 B TOPFET HSS G L Fig. 2. Fig. 3. September 2001 1 Rev 1.300 Philips Semiconductors Product specification TOPFET high side switch SMD version LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VBG IL PD Tstg PARAMETER Continuous off-state supply voltage Continuous load current Total power dissipation Storage temperature Continuous junction temperature1 Mounting base temperature Reverse battery voltages2 -VBG -VBG Continuous reverse voltage Peak reverse voltage Application information RI, RS External resistors3 Input and status II, IS II, IS Continuous currents Repetitive peak currents Inductive load clamping EBL Non-repetitive clamping energy δ ≤ 0.1, tp = 300 µs IL = 10 A, VBG = 16 V Tj = 150˚C prior to turn-off -5 -50 to limit input, status currents 3.2 during soldering Tmb ≤ 140˚C Tmb ≤ 25˚C CONDITIONS MIN. 0 -55 - BUK217-50YT MAX. 50 10 115 175 150 260 UNIT V A W ˚C ˚C ˚C www.DataSheet4U.com Tj Tsold 16 32 V V kΩ - 5 50 mA mA 460 mJ ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 pF; R = 1.5 kΩ MIN. MAX. 2 UNIT kV THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal resistance Rth j-mb 4 CONDITIONS MIN. TYP. MAX. UNIT Junction to mounting base - - 0.86 1.08 K/W 1 For normal continuous operation. A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch. 2 Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must limit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the Tj rating must be observed. 3 To limit currents during reverse battery and transient overvoltages (positive or negative). 4 Of the output power MOS transistor. September 2001 2 Rev 1.300 Philips Semiconductors Product specification TOPFET high side switch SMD version STATIC CHARACTERISTICS Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25˚C unless otherwise stated. SYMBOL VBG VBL -VLG www.DataSheet4U.com BUK217-50YT PARAMETER Clamping voltages Battery to ground Battery to load Negative load to ground Negative load voltage1 Supply voltage 2 CONDITIONS IG = 1 mA IL = IG = 1 mA IL = 10 mA IL = 20 A; tp = 300 µs battery to ground MIN. 50 50 18 20 TYP. 55 55 23 25 MAX. 65 65 28 30 UNIT V V V V -VLG VBG Operating range 5.5 9 V ≤ VBG ≤ 16 V VLG = 0 V Tmb = 25˚C 4 - 35 V µA µA µA µA mA A IB IL IG IL Currents Quiescent current3 Off-state load current Operating current 5 6 - 0.1 0.1 2 - 20 2 20 1 4 - VBL = VBG Tmb = 25˚C IL = 0 A VBL = 0.5 V VBG 9 to 35 V 6V IL 5A 5A Tmb = 85˚C tp7 300 µs 300 µs Tmb 25˚C 150˚C 25˚C 150˚C Nominal load current Resistances RON RON On-state resistance On-state resistance 95 10 13 150 14 25 18 33 190 mΩ mΩ mΩ mΩ Ω RG Internal ground resistance IG = 10 mA 1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. 2 On-state resistance is increased if the supply voltage is less than 9 V. Refer to figure 8. 3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load. 4 The measured current is in the load pin only. 5 This is the continuous current drawn from the supply with no load connected, but with the input high. 6 Defined as in ISO 10483-1. Because of current limiting, this parameter is not applicable. 7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to th.


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