DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3322
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3322 is N-Channel...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK3322
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3322 is N-Channel DMOS FET device that
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ORDERING INFORMATION
PART NUMBER 2SK3322 2SK3322-S 2SK3322-ZJ PACKAGE TO-220AB (MP-25) TO-262 TO-263(MP-25ZJ) TO-263(MP-25ZK)
features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. ★
2SK3322-ZK
FEATURES
★ Low gate charge : QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 5.5 A) Gate voltage rating : ±30 V Low on-state resistance : RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 2.8 A) Avalanche capability ratings Surface mount package available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
600 ±30 ±5.5 ±20 1.5 65 150 −55 to +150 4.0 10.7
V V A A W W °C °C A mJ
Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
The information contained in this document is being issued in advance of the production cycle for the product. The parameters for the product may change before final production or NEC Electronics Corporation, at it...