3DD13001

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR£¨NPN £© TO¡ª 92 FEATURES Power dissipation PCM : 1.25 W£¨ Tamb=25¡æ£© Collector current www.DataSheet4U.com ICM : 0.2 A Collector-base voltage V(BR)CBO : 600 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE£¨ 1£© DC current gain hFE£¨ 2£© Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 unless Test otherwise MIN specified£© TYP MAX UNIT V V V 100 200 100 ¦Ì A ¦Ì A ¦Ì A conditions Ic= 100¦Ì A £¬ IE=0 IC= 1 mA , IB=0 600 400 7 IE= 100 ¦Ì A£¬ IC=0 VCB= 600 V , IE=0 VCE= 400 V , IB=0 VEB= 7 V , VCE= 20 IC=0 V, IC= 20m A 10 5 70 VCE= 10V, IC= 0.25 mA IC= 50mA, IB= 10 m A IC= 50 mA, IB= 10m A VCE= 20 V, I C=20mA 0.5 1.2 V V Transition frequency f T 8 MHz f = 1MHz Fall time Storage time t f IC=50mA, IB1=-IB2=5mA, VCC=45V 0.3 1.5 ¦Ì s ¦Ì s tS CLASSIFICATION OF h FE(1) Range 10-15 15-20 20-25 25-30 30-35 35-40 40-45 45-50 50-55 55-60 60-65 65-70 www.DataSheet4U.com TO-92 PACKAGE OUTLINE DIMENSIONS D D1 E b ¦Õ e e1 Symbol A A1 b c D D1 E e e1 L Ö Dimensions In M...