NPN Transistors. 3DD13002B Datasheet

3DD13002B Transistors. Datasheet pdf. Equivalent

Part 3DD13002B
Description Switch Mode NPN Transistors
Feature 3DD13002B Switch Mode NPN Transistors TO-92 www.DataSheet4U.com 1. EMITTER 2. COLLECTOR 3. BASE 1.
Manufacture Weitron Technology
Datasheet
Download 3DD13002B Datasheet




3DD13002B
Switch Mode NPN Transistors
www.DataSheet4U.com
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current
Total Device Dissipation TA=25 C
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tj
Tstg
3DD13002B
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
1
2
3
Value
400
600
6.0
1.0
1.0
150
-55 to +150
Unit
Vdc
Vdc
Vdc
Adc
W
C
C
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= 100 uAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0)
Collector Cutoff Current (VCB= 600 Vdc, IE=0)
Emitter Cutoff Current (VEB= 6.0Vdc, IC=0)
Symbol Min Max Unit
V(BR)CEO
400
-
Vdc
V(BR)CBO
V(BR)EBO
600
6.0
-
-
Vdc
Vdc
ICBO
IEBO
- 100 uAdc
- 100 uAdc
WEITRON
http://www.weitron.com.tw



3DD13002B
3DD13002B
WE ITR ON
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
On Characteristics
DC Current Gain
www.DataS(IhCe=et41U0.0commAdc, VCE=10Vdc)
(IC= 200 mAdc, VCE= 10Vdc)
(IC= 10 mAdc, VCE= 10Vdc)
Collector-Emitter Saturation Voltage
(IC= 200 mAdc, IB= 40 mAdc)
Base-Emitter Saturation Voltage
(IC= 200 mAdc, IB= 40 mAdc)
Current-Gain-Bandwidth Product
(IC= 100 mAdc, VCE= 10 Vdc, f=1.0MHz)
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
fT
Min
20
9
6
-
-
5.0
Max Unit
25 -
40 -
.-
0.8 Vdc
1.1 Vdc
- MHz
Switching Characteristics
Storage Time
Fall Time
VCC=100V, IC =1A
IB1=-IB2=200mA
ts - 2.5 us
tf - 0.5 us
Classification of hFE(2)
Rank
Range
9-15
15-20
20-25
25-30
30-35
35-40
WEITRON
http://www.weitron.com.tw







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