3DD13002B

3DD13002B Switch Mode NPN Transistors TO-92 www.DataSheet4U.com 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Total Device Dissipation T A =25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg Value 400 600 6.0 1.0 1.0 150 -55 to +150 Unit Vdc Vdc Vdc Adc W C C ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= 100 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) Collector Cutoff Current (VCB= 600 Vdc, IE=0) Emitter Cutoff Current (VEB= 6.0Vd c, IC =0) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min 400 600 6.0 Max 100 100 Unit Vdc Vdc Vdc uAdc uAdc WEITRON http://www.weitron.com.tw 3DD13002B Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min WE IT R ON Max Unit On Characteristics DC Current Gain (IC= 100 mAdc, VCE=10Vdc) www.DataSheet4U.com (IC= 200 mAdc, VCE= 10Vdc) (IC= 10 mAdc, VCE= 10Vdc) Collector-Emitter Saturation Voltage (IC= 200 mAdc, IB= 40 mAdc) Base-Emitter Saturation Voltage (IC= 200 mAdc, IB= 40 mAdc) Current-Gain-Bandwidth Product (IC= 100 mAdc, VCE= 10 Vdc, f=1.0MHz) hFE(1) hFE(2) hFE(3) VCE(sat) VBE(sat) fT 20 9 6 - 25 40 . 0.8 1.1 - Vdc Vdc - 5.0 - MHz Switching Characteristics Storage Time Fall Time VCC =100V, IC =1A IB1=-I B2=200mA ts tf 2...