TRANSISTOR. 3DD13003 Datasheet

3DD13003 TRANSISTOR. Datasheet pdf. Equivalent

Part 3DD13003
Description TRANSISTOR
Feature JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13003.
Manufacture Jiangsu Changjiang Electronics
Datasheet
Download 3DD13003 Datasheet




3DD13003
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
3DD13003 TRANSISTOR ( NPN )
FEATURES
TO-220
1. BASE
· power switching applications
www.DataSheet4U.com
MAXIMUM RATINGS* TA=25unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
700 V
VCEO
Collector-Emitter Voltage
400 V
VEBO
Emitter-Base Voltage
9V
IC Collector Current -Continuous
1.5 A
PC Collector Dissipation
2W
TJ, Tstg Junction and Storage Temperature
-55-150
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
123
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
VBE
Transition frequency
fT
Fall time
Storage time
tf
ts
Test conditions
Ic= 1000uA, IE=0
Ic= 10 mA, IB=0
IE= 1mA, IC=0
VCB= 700V , IE=0
VCE= 400V, B=0
VEB= 9 V, IC=0
VCE= 5 V, IC= 0.5 A
VCE= 5 V, IC= 1.5A
IC=1000mA,IB= 250 mA
IC=1000mA, IB= 250mA
IE= 2000 mA
VCE=10V,Ic=100mA
f =1MHz
IC=1A, IB1=-IB2=0.2A
VCC=100V
MIN TYP MAX UNIT
700 V
400 V
9V
1000
µA
500 µA
1000
µA
8 40
5
1V
1.2 V
3V
5 MHz
0.5 µs
2.5 µs
CLASSIFICATION OF hFE (1)
Rank
Range
8-10
10-15
15-20
20-25
25-30
30-35
35-40



3DD13003
Typical Characteristics
www.DataSheet4U.com
3DD13003







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)