3DD13005

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13005 TRANSISTOR£¨NPN £© TO¡ª 220 FEATURES Power dissipation www.DataSheet4U.com PCM : 1.5 W£¨ Tamb=25¡æ£© Collector current ICM: 4A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition Frequency Fall time Storage time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE (sat) VBE (sat) f t t 1.BASE 2.COLLECTOR 3.EMITTER 123 unless Test otherwise specified£© TYP MAX UNIT V V V 1000 100 1000 µA µA µA conditions MIN 700 400 9 Ic= 1000 µA£¬ IE=0 Ic= 10 mA£¬ IB=0 IE= 1000 µA£¬ IC=0 VCB= 700 V £¬IE=0 VCE= 400 V £¬IB=0 VEB= 9 V £¬IC=0 VCE= 5 V, IC= 1000mA IC=2000m A,IB=500 mA IC=2000m A, IB= 500mA VCE=10 V, IC=500mA 10 40 0.6 1.6 V V MHz 0.9 4 µs µs T f = 1MHz IB1=-IB2=0.4A, IC=2A 5 f s VCC=120V CLASSIFICATION OF h FE Rank Range 10-15 15-20 20-25 25-30 30-35 35-40 www.DataSheet4U.com TO-220-3L PACKAGE OUTLINE DIMENSIONS D ¦Õ A C1 www.DataSheet4U.com E1 F L1 b1 E A1 b L e e1 C Symbol A A1 b b1 c c1 D E E1 e e1 F L L1 ¦Õ Dimensions In Millimeters Min 4.470 2.520 0.710 1.17...