3DD13007

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13007 TRANSISTOR£¨NPN £© TO¡ª 220 FEATURES Power dissipation PCM : 2 W£¨ Tamb=25¡æ£© Collector current www.DataSheet4U.com ICM: 8 A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE£¨ 1£© DC current gain hFE£¨ 2£© Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Fall time Storage time VCE(sat) VBE(sat) fT VCE=5 V, IC=5A IC=2A,IB=0.4A IC=2A, IB= 0.4A Ic=500mA,VCE=10V f=1MH Z 1.BASE 2.COLLECTOR 3.EMITTER 123 unless Test otherwise specified£© TYP MAX UNIT V V V 1 100 8 5 40 30 1 1.2 4 80 0.7 3 V V MHZ mA µA conditions MIN 700 400 9 Ic= 1mA£¬ IE=0 Ic= 10m A£¬ IB=0 IE= 1mA£¬ IC=0 VCB= 700V£¬IE=0 VEB= 9 V£¬IC=0 VCE= 5V, IC= 2 A Cob tf ts VCE=10,I E=0£¬ f=0.1MHz Vcc=125V, Ic=5A IB1=-IB2=1A pF µs µs CLASSIFICATION OF h FE(1) Rank Range 8-15 15-20 20-25 25-30 30-35 35-40 www.DataSheet4U.com TO-220-3L PACKAGE OUTLINE DIMENSIONS D ¦Õ A C1 www.DataSheet4U.com E1 F L1 b1 E A1 b L e e1 C Symbol A A1 b b1 c c1 D E E1 e e1 F L L1 ¦Õ Dimensions In Millimeters Min 4.470 2.520 0.710 1.170 0.310 1...