AON3402

AON3402 N-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS (V) = 20V ID = 12A (VGS = 4.5V) RDS(ON) < 13mΩ (VGS = 4.5V) RDS(ON) < 17mΩ (VGS = 2.5V) RDS(ON) < 26mΩ (VGS = 1.8V) ESD Rating: 2000V HBM The AON3402 uses advanced trench technology to excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its commondrain configuration. Standard Product AON3402 is Pb-free (meets ROHS & Sony 259 specifications). AON3402L is a Green Product ordering option. AON3402 and AON3402L are electrically identical. DFN 3x3 Top View Bottom View D D D D D S S S G D D D D S G G S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 20 ±12 12 9.6 40 3 1.9 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 32 65 25 Max 42 100 35 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AON3402 Electrical Characteristics (T J=25°C unless otherwise no...