AON7400 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AON7400 uses advanced trench technolo...
AON7400 N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AON7400 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in SMPS and www.DataSheet4U.com general purpose applications. Standard Product AON7400 is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = 30V (VGS = 10V) ID = 10A RDS(ON) < 12.5mΩ (VGS = 10V) RDS(ON) < 14.5mΩ (VGS = 4.5V)
DFN 3x3 Top View Bottom View D Pin 1
S S S G
D D D D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,H Pulsed Drain Current Continuous Drain Current G Power Dissipation Power Dissipation
B
Maximum 30 ±12 20 16 80 10 9 35 14 3.1 2 -55 to 150
Units V V
TC=25°C TC=100°C
C
ID IDM IDSM PD PDSM TJ, TSTG
A
TA=25°C TA=70°C TC=25°C TC=100°C TA=25°C
A
W
TA=70°C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case D
°C
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC
Typ 30 60 3
Max 40 75 3.5
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON7400
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55°C VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=10A Static Drain-Source On-Resistance VGS=4.5V, I...