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AON5802 Dataheets PDF



Part Number AON5802
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description Field Effect Transistor
Datasheet AON5802 DatasheetAON5802 Datasheet (PDF)

AON5802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AON5800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional www.DataSheet4U.com or bi-directional load switch, facilitated by its common-drain configuration. Standard Product AON5802 is Pb-free (meets ROHS & Sony.

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AON5802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AON5800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional www.DataSheet4U.com or bi-directional load switch, facilitated by its common-drain configuration. Standard Product AON5802 is Pb-free (meets ROHS & Sony 259 specifications). AON5802L is a Green Product ordering option. AON5802 and AON5802L are electrically identical. Features VDS (V) = 30V ID = 8 A (VGS = 10V) RDS(ON) < 17 mΩ (VGS = 10V) RDS(ON) < 20 mΩ (VGS = 4.5V) RDS(ON) < 22 mΩ (VGS = 4.0V) RDS(ON) < 24 mΩ (VGS = 3.1V) RDS(ON) < 30 mΩ (VGS = 2.5V) ESD Rating: 2000V HBM S2 G2 D S1 Top View G1 Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain . Current RθJA=75°C/W TA=70°C C Pulsed Drain Current Power Dissipation RθJA=75°C/W A Maximum 30 ±12 8 6 45 1.7 1.0 -55 to 150 Units V ID IDM PDSM TJ, TSTG A TA=25°C TA=70°C W °C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient B Maximum Junction-to-Lead Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 30 61 4.5 Max 40 75 6 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AON5802 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS=±10V VDS=0V, IG=±250uA VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=8A TJ=125°C RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=6A VGS=4.0V, ID=4A VGS=3.1V, ID=4A VGS=2.5V, ID=3A gFS VSD IS Forward Transconductance VDS=5V, ID=8A 0.5 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current ±12 0.6 30 14 23 17 18 20 23 37 0.76 0.9 4.5 869 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 129 104 1.5 10.7 VGS=4.5V, VDS=15V, ID=8A 2.1 4.3 3.4 VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω IF=8A, dI/dt=100A/µs 11.2 27.2 6.7 24.6 12.9 17 28 20 22 24 30 S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC mΩ 1 1.5 Min 30 1 5 10 Typ Max Units V µA µA V V A STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS BVGSO VGS(th) ID(ON) www.DataSheet4U.com Zero Gate Voltage Drain Current Gate-Body leakage current Gate-Source Breakdown Voltage Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev2: June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AON5802 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 25 20 ID (A) 15 10 5 VGS=2V 5 10V 20 2.5V 3V 4V ID(A) 15 VDS=5V 10 125°C 25°C 0 www.DataSheet4U.com 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 40 Normalized On-Resistance VGS=2.5V VGS=4.5V 0 0.5 1 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 VGS=10V ID=8A VGS=4.5V ID=6A 30 RDS(ON) (mΩ) 20 VGS=2.5V ID=3A 10 VGS=10V 0 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 ID=8A 50 40 30 20 10 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25°C 125°C IS (A) 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 125°C RDS(ON) (mΩ) 25°C 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics Alph.


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