AON5800

AON5800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AON5800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while www.DataSheet4U.com retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its commondrain configuration. Standard Product AON5800 is Pbfree (meets ROHS & Sony 259 specifications). AON5800L is a Green Product ordering option. AON5800 and AON5800L are electrically identical. Features VDS (V) = 20V ID = 8 A (VGS = 10V) RDS(ON) < 16 mΩ (VGS = 10V) RDS(ON) < 20 mΩ (VGS = 4.5V) RDS(ON) < 21 mΩ (VGS = 4.0V) RDS(ON) < 22 mΩ (VGS = 3.1V) RDS(ON) < 27 mΩ (VGS = 2.5V) RDS(ON) < 45 mΩ (VGS = 1.8V) ESD Rating: 2000V HBM S2 G2 D S1 G1 Top View Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain ID Current RθJA=75°C/W TA=70°C Pulsed Drain Current C IDM TA=25°C Power Dissipation A RθJA=75°C/W TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Maximum Junction-to-Case B PDSM TJ, TSTG Maximum 20 ±12 8 6.3 45 1.6 1.0 -55 to 150 Units V A W °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 30 61 4.5 Max 40 75 6 Units °C/W °C/W °C/W Alpha & Omega ...