AON4803

AON4803 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AON4803 uses advanced trench technology to provide excellent R DS(ON), low gate charge and www.DataSheet4U.com operation with gate voltage as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Standard Product AON4803 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = -20V ID = -3.4A (V GS = -4.5V) RDS(ON) < 90mΩ (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -2.5V) RDS(ON) < 165mΩ (VGS = -1.8V) D1 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 D2 G1 S1 G2 S2 DFN3X2-8L Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead B MOSFET -20 ±8 -3.4 -2.7 -15 1.7 1.1 -55 to 150 Typ 51 88 28 Max 75 110 35 Units V V A VGS TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG Symbol RθJA RθJL W °C Units °C/W Alpha & Omega Semiconductor, Ltd. AON4803 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-16V, VGS=0V TJ=55°C VDS=0V, VGS=±8V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-3.4A Static Drain-Source On-Resistance TJ=125°C VGS=-2.5V, ID=-2.5A VGS=-1.8V, ID=-1....