AON4701

AON4701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AON4701 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation www.DataSheet4U.com of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AON4701 is Pb-free (meets ROHS & Sony 259 specifications). AON4701L is a Green Product ordering option. AON4701 and AON4701L are electrically identical. Features VDS (V) = -20V ID = -3.4A (VGS = -4.5V) RDS(ON) < 90mΩ (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -2.5V) RDS(ON) < 160mΩ (VGS = -1.8V) SCHOTTKY VDS (V) = 20V, IF = 1A, VF<[email protected] D A A S G 1 2 3 4 8 7 6 5 K K D D G S K DFN3X2 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage V Gate-Source Voltage GS TA=25°C ID Continuous Drain Current A TA=70°C IDM Pulsed Drain Current B VKA Schottky reverse voltage TA=25°C IF A Continuous Forward Current TA=70°C IFM Pulsed Forward Current B TA=25°C PD TA=70°C Power Dissipation TJ, TSTG Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Thermal Characteristics Schottky t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead Symbol RθJA RθJL RθJA RθJL MOSFET -20 ±8 ...