AON4604

AON4604 Complementary Enhancement Mode Field Effect Transistor General Description The AON4604 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The www.DataSheet4U.com complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AON4604 is Pb-free (meets ROHS & Sony 259 specifications). Features n-channel VDS (V) = 20V ID = 5.4A RDS(ON) < 42mΩ RDS(ON) < 52mΩ RDS(ON) < 72mΩ p-channel -20V -3.8A (VGS= ±4.5V) < 90mΩ (VGS = ±4.5V) < 120mΩ (VGS = ±2.5V) < 170mΩ (VGS = ±1.8V) D1 D2 DFN3X2-8L S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 G1 S1 G2 S2 n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 20 VGS Gate-Source Voltage ±8 Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics: n-channel Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Thermal Characteristics: p-channel Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C TA=25°C TA=70°C ID IDM PD TJ, TSTG 5.4 4.3 15 1.9 1.2 -55 to 150 p-channel Units V V A Max p-channel -20 ±8 -3.8 -3.0 -15 1.9 1.2 -55 to 150 W °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 51.5 82 37 Typ 51.5 82 37 Max 65 100 50 Max 65 100 50 Units ...