AON4602

AON4602 Complementary Enhancement Mode Field Effect Transistor General Description The AON4602 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power www.DataSheet4U.com inverter, suitable for a multitude of applications. Standard Product AON4602 is Pb-free (meets ROHS & Sony 259 specifications). AON4602L is a Green Product ordering option. AON4602 and AON4602L are electrically identical. Features n-channel VDS (V) = 20V ID = 4.2A p-channel -20V -3.4A (VGS= ±4.5V) (VGS = ±4.5V) (VGS = ±2.5V) (VGS = ±1.8V) D2 RDS(ON)< 50mΩ < 90mΩ RDS(ON) < 63mΩ < 120mΩ RDS(ON) < 87mΩ < 160mΩ D1 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 G1 S1 G2 S2 DFN3X2 n-channel p-channel Units V V A Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Max n-channel VDS Drain-Source Voltage 20 VGS Gate-Source Voltage ±8 Continuous Drain TA=25°C 4.2 Current A 3.2 ID TA=70°C Pulsed Drain Current B Max p-channel -20 ±8 -3.4 -2.7 -15 1.7 1.1 -55 to 150 IDM PD TJ, TSTG TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics: n-channel Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Thermal Characteristics: p-channel Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C 15 1.4 0.9 -55 to 150 W °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Symbol t ≤ 10s Steady-St...